X-On Electronics has gained recognition as a prominent supplier of HSU4115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HSU4115 MOSFETs are a product manufactured by HUASHUO. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HSU4115 HUASHUO

Name: HSU4115
Brand: HUASHUO
SKU: HSU4115_HUASHUO
Availability: InStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	HSU4115
Manufacturer:	HUASHUO
Category:	MOSFETs
Description:	MOSFET P Channel -40V 52A 2.5V @ 250uA 13mΩ @ 18A,10V TO-252 RoHS
Datasheet:	HSU4115 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.214 ea
Line Total: USD 1.07

Availability - 2344
Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ: 5 Multiples: 5
Pack Size: 5

HSU4115 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

2344

Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ : 5
Multiples : 5

5 : USD 0.214
50 : USD 0.1727
150 : USD 0.155
500 : USD 0.1203
2500 : USD 0.1104
5000 : USD 0.1045

Specifications

Manufacturer

HUASHUO HUASHUO

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

TO - 252 TO - 252

Brand Category

Huashuo Huashuo

Fet Type

p - channel p - channel

Drain To Source Voltagevdss

- 40 V - 40 V

Continuous Drain Current Id @ 25°C

52 A 52 A

Vgsth Max @ Id

2.5 V @ 250ua 2.5 V @ 250ua

Rds On Max @ Id Vgs

13m? @ 18a,10v 13m? @ 18a,10v

Power Dissipation-Max Ta 25°C

52.1 W 52.1 W

Drain Source Voltage Vdss

40 V 40 V

Continuous Drain Current Id

52 A 52 A

Drain Source On Resistance Rdson@Vgs Id

13 mOhms @10V , 18A 13 mOhms @10V , 18A

Power Dissipation Pd

52.1 W 52.1 W

Gate Threshold Voltage Vgsth@Id

2.5 V @250uA 2.5 V @250uA

Type

P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

HSU4115 Alternative Parts

We are delighted to provide the HSU4115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HSU4115 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HSU4115 is a P-channel enhancement mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) developed by Huashuo. It has maximum drain-source voltage of -40V, drain current of 52A, gate threshold voltage of 2.5V, gate leakage current of 250uA, static drain-source on-resistance of 13mO, drain-source on-resistance of 18A, maximum operating temperature of 10°C, and is compliant with the Restriction of Hazardous Substances (RoHS) standards. It is packaged in a TO-252 package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HUASHUO may also be referenced as

Huashuo Semiconductor

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Availability	Price	Buy Price	Quantity
2344 Ship by Fri. 10 Jan to Wed. 15 Jan MOQ : 5 Multiples : 5	5 : USD 0.214 50 : USD 0.1727 150 : USD 0.155 500 : USD 0.1203 2500 : USD 0.1104 5000 : USD 0.1045

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