X-On Electronics has gained recognition as a prominent supplier of HYG027N04LR1D MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG027N04LR1D MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG027N04LR1D HuaYi

HYG027N04LR1D electronic component of HuaYi
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See Product Specifications
Part No.HYG027N04LR1D
Manufacturer: HuaYi
Category: MOSFETs
Description: TO-252-2L MOSFETs ROHS
Datasheet: HYG027N04LR1D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3711 ea
Line Total: USD 1.86 
Availability - 2395
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2395
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ : 5
Multiples : 5
5 : USD 0.3711
50 : USD 0.3007
150 : USD 0.2704
500 : USD 0.2226
2500 : USD 0.2058
5000 : USD 0.1957

   
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We are delighted to provide the HYG027N04LR1D from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG027N04LR1D and other electronic components in the MOSFETs category and beyond.

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The HYG027N04LR1D is a four-terminal MOSFET (metal–oxide–semiconductor field-effect transistor) manufactured by HuaYi. It uses a TO-252-2L package which is compatible with a standard surface mount technology. The part is RoHS (Restriction of Hazardous Substances) compliant, which means it adheres to an EU standard that restricts the use of certain hazardous materials in electrical and electronic equipment to reduce environmental pollution. The HYG027N04LR1D is an N-type MOSFET, meaning that it is commonly used for source-to-ground applications. The device has a total gate charge of 42 nC and a maximum drain-source on-state resistance of 0.72 ohm. This device can handle a drain current of 20 A with an operating junction temperature of 175°C. Additionally, the device offers fast switching and a high capacitance ratio for low gate voltages.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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