X-On Electronics has gained recognition as a prominent supplier of HYG045N04LA1D MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG045N04LA1D MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG045N04LA1D HuaYi

HYG045N04LA1D electronic component of HuaYi
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See Product Specifications
Part No.HYG045N04LA1D
Manufacturer: HuaYi
Category: MOSFETs
Description: TO-252-2L MOSFETs ROHS
Datasheet: HYG045N04LA1D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2994 ea
Line Total: USD 1.5 
Availability - 2420
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2420
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ : 5
Multiples : 5
5 : USD 0.2994
50 : USD 0.2426
150 : USD 0.2181
500 : USD 0.1878
2500 : USD 0.1662
5000 : USD 0.1579

   
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We are delighted to provide the HYG045N04LA1D from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG045N04LA1D and other electronic components in the MOSFETs category and beyond.

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The HYG045N04LA1D is a TO-252-2L MOSFET ROHS (Restriction of Hazardous Substances) compliant device manufactured by HuaYi. The HYG045N04LA1D is a N-channel MOSFET with a drain-source voltage rating of 45V, an RDS(on) of 4mOhm at 10V, a gate-source voltage rating of -20V to 20V, and a gate charge of Qg of 16nC. It is available in both through-hole and surface-mount packages. With its low on-resistance and high peak current ratings, it is ideal for use in a variety of applications, from DC-DC converters and motor drivers to automotive circuitry and high power switching.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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