X-On Electronics has gained recognition as a prominent supplier of HXY30N10D MOSFETs across the USA, India, Europe, Australia, and various other global locations. HXY30N10D MOSFETs are a product manufactured by HXY MOS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HXY30N10D HXY MOS

HXY30N10D electronic component of HXY MOS
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See Product Specifications
Part No.HXY30N10D
Manufacturer: HXY MOS
Category: MOSFETs
Description: 100V 30A 52.1W 47mΩ@10V N Channel TO-252-2L MOSFETs ROHS
Datasheet: HXY30N10D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.278 ea
Line Total: USD 1.39 
Availability - 931
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
931
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 5
Multiples : 5
5 : USD 0.278
50 : USD 0.2225
150 : USD 0.1989
500 : USD 0.1692
2500 : USD 0.1484
5000 : USD 0.1405

   
Manufacturer
Product Category
Package
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
Input Capacitance Ciss@Vds
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HXY30N10D from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HXY30N10D and other electronic components in the MOSFETs category and beyond.

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FETThe HXY30N10D is a N Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by HXY, compliant with the EU Restriction of Hazardous Substances (RoHS) Directive. This device is suitable for a wide range of switching and amplifying tasks and is in the popular TO-252-2L surface-mount package form factor. It has a DC drain source voltage rating of 100V and a maximum drain current rating of 30A with a drain-source on-state resistance of 47 mO when at a gate-source voltage of 10V. It is capable of operating at a maximum power dissipation of 52.1W.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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