Product Information

HXY30N10D

Name: HXY30N10D
Brand: HXY MOS
SKU: HXY30N10D_HXYMOS
Availability: OutOfStock
Rating: 5 (11 reviews)

HXY30N10D electronic component of HXY MOS

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Datasheet

100V 30A 52.1W 47mΩ@10V N Channel TO-252-2L MOSFETs ROHS

Manufacturer: HXY MOS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.3564 ea
Line Total: USD 1.78

0 - Global Stock

MOQ: 5 Multiples: 5
Pack Size: 5

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Wed. 29 May MOQ : 5 Multiples : 5 HXY30N10D HXY MOS	5 : USD 0.3059 50 : USD 0.2468 150 : USD 0.2214 500 : USD 0.1897 2500 : USD 0.1675 5000 : USD 0.159

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Additional Infomation About Product

FETThe HXY30N10D is a N Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by HXY, compliant with the EU Restriction of Hazardous Substances (RoHS) Directive. This device is suitable for a wide range of switching and amplifying tasks and is in the popular TO-252-2L surface-mount package form factor. It has a DC drain source voltage rating of 100V and a maximum drain current rating of 30A with a drain-source on-state resistance of 47 mO when at a gate-source voltage of 10V. It is capable of operating at a maximum power dissipation of 52.1W.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HXY MOS may also be referenced as

HXY MOSFET

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Manufacturer HXY MOS HXY MOS
Product Category MOSFET MOSFET
Package TO - 252 - 2L TO - 252 - 2L
Rohs y y
Drain Source Voltage Vdss 100 V 100 V
Continuous Drain Current Id 30 A 30 A
Power Dissipation Pd 52.1 W 52.1 W
Drain Source On Resistance Rdson@Vgs Id 47 mOhms @10V 47 mOhms @10V
Gate Threshold Voltage Vgsth@Id 2.5 V @250uA 2.5 V @250uA
Type N Channel N Channel
Input Capacitance Ciss@Vds 3848 pF 3848 pF