X-On Electronics has gained recognition as a prominent supplier of AIGB30N65F5ATMA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. AIGB30N65F5ATMA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

AIGB30N65F5ATMA1 Infineon

AIGB30N65F5ATMA1 electronic component of Infineon
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Part No.AIGB30N65F5ATMA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors DISCRETE SWITCHES
Datasheet: AIGB30N65F5ATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.3771 ea
Line Total: USD 6.38 
Availability - 9
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ : 1
Multiples : 1
1 : USD 6.3771
30 : USD 6.0641

   
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We are delighted to provide the AIGB30N65F5ATMA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AIGB30N65F5ATMA1 and other electronic components in the IGBT Transistors category and beyond.

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The AIGB30N65F5ATMA1 is an IGBT discrete switch manufactured by Infineon. It is a high-power, low-voltage switch that is built on an Insulated Gate Bipolar Transistor (IGBT) structure. This switch offers an optimized dynamic behavior and excellent thermal characteristics, making it suitable for uses in a wide range of applications. It has an operating voltage of up to 650V and a continuous current range of up to 30A. It also features a fast on/off switching time, with a maximum turn-on time of 200ns and a turn-off time of 300ns. Additionally, it is able to dissipate 600W of power and offers a very low gate charge for improved EMI performance. The AIGB30N65F5ATMA1 IGBT discrete switch helps to improve power efficiency and increase the reliability of power systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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