X-On Electronics has gained recognition as a prominent supplier of AIGW50N65F5XKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. AIGW50N65F5XKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

AIGW50N65F5XKSA1 Infineon

AIGW50N65F5XKSA1 electronic component of Infineon
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Part No.AIGW50N65F5XKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors DISCRETES
Datasheet: AIGW50N65F5XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 10.4867 ea
Line Total: USD 10.49 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 10.4867
10 : USD 6.2899
100 : USD 5.0479
500 : USD 4.9534
1000 : USD 4.851

0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 8.3928
10 : USD 7.2804

0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 7.6395
3 : USD 5.5498
8 : USD 5.2513

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AIGW50N65F5XKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AIGW50N65F5XKSA1 and other electronic components in the IGBT Transistors category and beyond.

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The AIGW50N65F5XKSA1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) from Infineon. It is a 50A, 650V N-channel switch that is designed for medium to high power applications. This MOS-controlled IGBT features an integrated injection-enhanced (IGT-E) technology that helps to reduce switching losses, allowing for higher efficiency power conversion solutions. It has a maximum collector-emitter voltage of 650V and a maximum collector current rating of 50A. This device includes a high-speed inverse-parallel (HIP) diode package with low-level forward voltage drop to further increase efficiency. The AIGW50N65F5XKSA1 provides a high level of system reliability, which makes it suitable for consumer and industrial applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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