The AIGW50N65H5XKSA1 is an Infineon IGBT Transistor Discrete, which is designed for use in high power applications such as switching, power conversion, motor control, and electric vehicle traction. This IGBT features a maximum collector emitter voltage of 650V, a maximum Collector Emitter Saturation voltage of 2.2V, and a maximum gate source voltage of 20V. It also has a current rating of 50A, and a high frequency, low gate charge performance. This device is suitable for high power applications, where a high switching speed and switching loss is not a requirement.