SUPPLEMENT Am29F016B Known Good Die 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash MemoryDie Revision 1 DISTINCTIVE CHARACTERISTICS n 5.0 V 10%, single power supply operation n Minimum 100,000 write/erase cycles guaranteed Minimizes system level power requirements n Compatible with JEDEC standards Pinout and software compatible with n Manufactured on 0.35 m process technology single-power-supply Flash standard n High performance Superior inadvertent write protection 120 ns access time n Data Polling and toggle bits n Low power consumption Provides a software method of detecting program 25 mA typical active read current or erase cycle completion 30 mA typical program/erase current n Ready/Busy output (RY/BY ) <1 A typical standby current (standard access time to active mode) Provides a hardware method for detecting program or erase cycle completion n Flexible sector architecture n Erase Suspend/Resume 32 uniform sectors of 64 Kbytes each Suspends a sector erase operation to read data Any combination of sectors can be erased. from, or program data to, a non-erasing sector, Supports full chip erase then resumes the erase operation Group sector protection: n Hardware reset pin (RESET ) A hardware method of locking sector groups to Resets internal state machine to the read mode prevent any program or erase operations within that sector group n Tested to datasheet specifications at temperature Temporary Sector Group Unprotect allows code changes in previously locked sectors n Quality and reliability levels equivalent to n Embedded Algorithms standard packaged components Embedded Erase algorithm automatically n 20-year data retention at 125C preprograms and erases the entire chip or any combination of designated sectors Embedded Program algorithm automatically writes and verifies bytes at specified addresses Publication 21551 Rev: C Amendment/0 Issue Date: December 1998S U PPL EM EN T GENERAL DESCRIPTION The Am29F016B in Known Good Die (KGD) form is a 16 The sector erase architecture allows memory sectors to Mbit, 5.0 volt-only Flash memory. AMD defines KGD as be erased and reprogrammed without affecting the data standard product in die form, tested for functionality and contents of other sectors. A sector is typically erased speed. AMD KGD products have the same reliability and and verified within one second. The device is erased quality as AMD products in packaged form. when shipped from the factory. The hardware sector group protection feature disables Am29F016B Features both program and erase operations in any combination The Am29F016B is a 16 Mbit, 5.0 volt-only Flash of the eight sector groups of memory. A sector group memory organized as 2,097,152 bytes of 8 bits each. consists of four adjacent sectors. The 2 Mbytes of data are divided into 32 sectors of 64 Kbytes each for flexible erase capability. The 8 bits of The Erase Suspend feature enables the system to put data appear on DQ0DQ7. The Am29F016B is erase on hold for any period of time to read data from, or manufactured using AMDs 0.35 m process technology. program data to, a sector that is not being erased. True This device is designed to be programmed in-system background erase can thus be achieved. with the standard system 5.0 volt VCC supply. A 12.0 The device requires only a single 5.0 volt power supply volt VPP is not required for program or erase operations. for both read and write functions. Internally generated The device can also be programmed in standard and regulated voltages are provided for the program and EPROM programmers. erase operations. A low V detector automatically CC The standard device offers an access time of 120 ns, inhibits write operations during power transitions. The allowing high-speed microprocessors to operate without host system can detect whether a program or erase wait states. To eliminate bus contention, the device has cycle is complete by using the RY/BY pin, the DQ7 separate chip enable (CE ), write enable (WE ), and (Data Polling) or DQ6 (toggle) status bits. After a output enable (OE ) controls. program or erase cycle has been completed, the device automatically returns to the read mode. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Com- A hardware RESET pin terminates any operation in mands are written to the command register using stan- progress. The internal state machine is reset to the read dard microprocessor write timings. Register contents mode. The RESET pin may be tied to the system reset serve as input to an internal state machine that controls circuitry. Therefore, if a system reset occurs during the erase and programming circuitry. Write cycles also either an Embedded Program or Embedded Erase algo- internally latch addresses and data needed for the pro- rithm, the device is automatically reset to the read mode. gramming and erase operations. Reading data out of the This enables the systems microprocessor to read the device is similar to reading from 12.0 volt Flash or boot-up firmware from the Flash memory. EPROM devices. AMDs Flash technology combines years of Flash The device is programmed by executing the program memory manufacturing experience to produce the command sequence. This invokes the Embedded highest levels of quality, reliability, and cost Program algorithman internal algorithm that automat- effectiveness. The device electrically erases all bits ically times the program pulse widths and verifies proper within a sector simultaneously via Fowler-Nordheim tun- cell margin. The device is erased by executing the erase neling. The bytes are programmed one byte at a time command sequence. This invokes the Embedded Erase using the EPROM programming mechanism of hot elec- algorithman internal algorithm that automatically pre- tron injection. programs the array (if it is not already programmed) Electrical Specifications before executing the erase operation. During erase, the device automatically times the erase pulse widths and Refer to the Am29F016B data sheet, PID 21444, for verifies proper cell margin. full electrical specifications on the Am29F016B in KGD form. PRODUCT SELECTOR GUIDE Family Part Number Am29F016B KGD Speed Option (V = 5.0 V 10%) -120 CC Max Access Time, t (ns) 120 ACC Max CE Access, t (ns) 120 CE Max OE Access, t (ns) 50 OE 2 Am29F016B Known Good Die