AUTOMOTIVE GRADE AUIRGP35B60PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE V = 600V CES Features C V typ. = 1.85V CE(on) NPT Technology, Positive Temperature Coefficient V = 15V I = 22A GE C Lower V (SAT) CE Lower Parasitic Capacitances Equivalent MOSFET G Minimal Tail Current Parameters E HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode R typ. = 84m CE(on) n-channel Tighter Distribution of Parameters I (FET equivalent) = 35A D Higher Reliability Lead-Free, RoHS Compliant C Automotive Qualified * Applications PFC and ZVS SMPS Circuits E C DC/DC Converter Charger G TO-247AC Benefits AUIRGP35B60PD Parallel Operation for Higher Current Applications G C E Lower Conduction Losses and Switching Losses Gate Collector Emitter Higher Switching Frequency up to 150kHz Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity AUIRGP35B60PD TO-247AC Tube 25 AUIRGP35B60PD Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress rat- ings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless A otherwise specified. Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 60 C C I T = 100C Continuous Collector Current 34 C C I Pulse Collector Current (Ref. Fig. C. T.4) 120 CM I Clamped Inductive Load Current 120 A LM I T = 25C Diode Continuous Forward Current 40 F C I T = 100C Diode Continuous Forward Current 15 F C I Maximum Repetitive Forward Current 60 FSM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 308 D C W P T = 100C Maximum Power Dissipation 123 D C T Operating Junction and -55 to +150 J C T Storage Temperature Range STG Soldering Temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case (each IGBT) 0.41 R (IGBT) JC Thermal Resistance Junction-to-Case (each Diode) 1.7 R (Diode) JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50 R CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 R JA Weight 6.0(0.21) g(oz) *Qualification standards can be found at www.infineon.com 1 2017-08-24 AUIRGP35B60PD Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref. Fig. V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.78 V/C V = 0V, I = 1mA (25C-125C) V / T (BR)CES J GE C Internal Gate Resistance 1.7 1MHz, Open Collector 4,5,6,8,9 R G 1.85 2.15 I = 22A, V = 15V C GE 2.25 2.55 I = 35A, V = 15V C GE V Collector-to-Emitter Saturation Voltage V CE(on) 2.37 2.80 I = 22A, V = 15V, T = 125C C GE J 3.00 3.45 I = 35A, V = 15V, T = 125C C GE J Gate Threshold Voltage 3.0 4.0 5.0 V I = 250A 7,8,9 V C GE(th) Threshold Voltage temp. coefficient -10 mV/C V = V , I = 1.0mA V /TJ CE GE C GE(th) gfe Forward Transconductance 36 S V = 50V, I = 22A,PW = 80s CE C Collector-to-Emitter Leakage Current 3.0 375 V = 0V, V = 600V A GE CE I CES 0.35 V = 0V, V = 600V,T = 125C mA GE CE J 1.30 1.70 I = 15A F V Diode Forward Voltage Drop V 10 FM 1.20 1.60 I = 15A, T = 125C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V, V = 0V GE CE GES Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref. Fig. Q Total Gate Charge (turn-on) 160 240 I = 22A 17 g C Q Gate-to-Emitter Charge (turn-on) 55 83 nC V = 15V CT1 GE ge Q Gate-to-Collector Charge (turn-on) 21 32 V = 400V gc CC E Turn-On Switching Loss 220 270 on E Turn-Off Switching Loss 215 265 off J I = 22A, V = 390V, E Total Switching Loss 435 535 C CC total t Turn-On delay time 26 34 V = +15V, d(on) GE CT3 t Rise time 6.0 8.0 ns R = 3.3 , L = 200H, r G t Turn-Off delay time 110 122 T = 25C J d(off) t Fall time 8.0 10 f E Turn-On Switching Loss 410 465 on CT3 E Turn-Off Switching Loss 330 405 11,13 off J WF1,WF2 I = 22A, V = 390V, E Total Switching Loss 740 870 total C CC t Turn-On delay time 26 34 V = +15V, d(on) GE CT3 t Rise time 8.0 11 ns r R = 3.3 , L = 200H, G 12,14 t Turn-Off delay time 130 150 T = 125C d(off) J WF1,WF2 t Fall time 12 16 f C Input Capacitance 3715 V = 0V ies GE C Output Capacitance 265 V = 30V 16 CC oes C Reverse Transfer Capacitance 47 pF f = 1.0Mhz res Effective Output Capacitance (Time Related) C 135 15 oes eff. V = 0V, V = 0V to 480V GE CE C Effective Output Capacitance (Energy Related) 179 oes eff. (ER) T = 150C, I = 120A 3 J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp 600V CT2 CC Rg = 22 , V = +15V to 0V GE 42 60 T = 25C 19 J t Diode Reverse Recovery Time ns rr 74 120 T = 125C J I = 15A, F 80 180 T = 25C 21 J V = 200V, Q Diode Reverse Recovery Charge nC rr R 220 600 T = 125C J di/dt = 200A/s 4.0 6.0 T = 25C 19,20,21,22 J I Peak Reverse Recovery Current A rr 6.5 10 T = 125C CT5 J Notes: R typ. = equivalent on-resistance = V typ./ I , where V typ.= 1.85V and I =22A. I (FET Equivalent) is the equivalent MOSFET I rating 25C for CE(on) CE(on) C CE(on) C D D applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. = 80% (V ), V = 20V, L = 28 H, R = 22 VCC CES GE G Pulse width limited by max. junction temperature. Energy losses includetai and diode reverse recovery, Data generated with use of Diode 30ETH06. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oes oes CE CES C eff.(ER) is a fixed capacitance that stores the same energy as C while V is rising from 0 to 80% V . oes oes CE CES 2 2017-08-24