BAL74/BAR74... Silicon Switching Diode For high-speed switching applications 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAL74 BAR74 Type Package Configuration Marking BAL74 SOT23 single JCs BAR74 SOT23 single JBs Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 50 V Diode reverse voltage V R 50 Peak reverse voltage V RM 250 mA Forward current I F Peak forward current I - FM Surge forward current, t = 1 s I 4.5 A FS Non-repetitive peak surge forward current I - FSM 370 mW Total power dissipation P tot T 54C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point , BAL74, BAR74 R 260 thJS 1 Pb-containing package may be available upon special request 2 For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-04-19BAL74/BAR74... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 50 - - V Breakdown voltage V (BR) I = 100 A (BR) Reverse current I A R V = 50 V - - 0.1 R V = 50 V, T = 150 C - - 100 R A - - 1 V Forward voltage V F I = 100 mA F AC Characteristics Diode capacitance C - - 2 pF T V = 0 V, f = 1 MHz R Reverse recovery time t - - 4 ns rr I = 10 mA, I = 10 mA, measured at I = 1mA, F R R R = 100 L Test circuit for reverse recovery time D.U.T. Pulse generator: t = 100ns, D = 0.05, p t = 0.6ns, R = 50 r i Oscillograph F Oscillograph: R = 50 , t = 0.35ns, r C 1pF EHN00015 2 2007-04-19