BAL99E6327HTSA1 Infineon

BAL99... Silicon Switching Diode For high-speed switching applications 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAL99 Type Package Configuration Marking BAL99 SOT23 single JFs Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 80 V Diode reverse voltage V R 85 Peak reverse voltage- V RM 250 mA Forward current I F Peak forward current I - FM Surge forward current, t = 1 s I 4.5 A FS 370 mW Total power dissipation P tot T 54C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 260 thJS 1 Pb-containing package may be available upon special request 2 For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-04-19BAL99... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 85 - - V Breakdown voltage V (BR) I = 100 A (BR) Reverse current I A R V = 70 V - - 1 R V = 25 V, T = 150 C - - 30 R A V = 70 V, T = 150 C - - 50 R A mV Forward voltage V F I = 1 mA - - 715 F I = 10 mA - - 855 F I = 50 mA - - 1000 F I = 150 mA - - 1250 F AC Characteristics - - 1.5 pF Diode capacitance C T V = 0 V, f = 1 MHz R Reverse recovery time t - - 4 ns rr I = 10 mA, I = 10 mA, measured at I = 1mA , F R R R = 100 L Test circuit for reverse recovery time D.U.T. Puls generator: t = 100ns, D = 0.05, p t = 0.6ns, R = 50 r i Oscillograph F Oscillograph: R = 50, t = 0.35ns r C 1pf EHN00014 2 2007-04-19