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X-On Electronics has gained recognition as a prominent supplier of BAS116E6327HTSA1 Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. BAS116E6327HTSA1 Small Signal Switching Diodes are a product manufactured by Infineon. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

BAS116E6327HTSA1 Infineon

BAS116E6327HTSA1 electronic component of Infineon
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See Product Specifications
Part No.BAS116E6327HTSA1
Manufacturer: Infineon
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes Silicon Low Leakage Diode
Datasheet: BAS116E6327HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1947 ea
Line Total: USD 0.19 
Availability - 12002
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11640
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0281

12002
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1947
10 : USD 0.121
100 : USD 0.0539
1000 : USD 0.0484
3000 : USD 0.0363
9000 : USD 0.0308
24000 : USD 0.0275
45000 : USD 0.0264
99000 : USD 0.0253

29100
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0502
6000 : USD 0.0497
9000 : USD 0.0411
15000 : USD 0.0407
21000 : USD 0.0403
24000 : USD 0.0357
30000 : USD 0.0354
45000 : USD 0.0345

11640
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0281

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Package / Case
Hts Code
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAS116E6327HTSA1 from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS116E6327HTSA1 and other electronic components in the Small Signal Switching Diodes category and beyond.

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BAS116... Silicon Low Leakage Diode Low-leakage applications Medium speed switching times 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAS116 Type Package Configuration Marking BAS116 SOT23 single JVs Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 80 V Diode reverse voltage V R 85 Peak reverse voltage V RM 250 mA Forward current I F Non-repetitive peak surge forward current I A FSM t = 1 s 4.5 t = 1 s 0.5 370 mW Total power dissipation P tot T 54C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 260 thJS BAS116 1 Pb-containing package may be available upon special request 2 For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-04-19BAS116... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 85 - - V Breakdown voltage V (BR) I = 100 A (BR) Reverse current I nA R V = 75 V - - 5 R V = 75 V, T = 150 C - - 80 R A mV Forward voltage V F I = 1 mA - - 900 F I = 10 mA - - 1000 F I = 50 mA - - 1100 F I = 150 mA - - 1250 F AC Characteristics - 2 - pF Diode capacitance C T V = 0 V, f = 1 MHz R Reverse recovery time t - 0.6 1.5 s rr I = 10 mA, I = 10 mA, measured at I = 1mA , F R R R = 100 L Test circuit for reverse recovery time D.U.T. Puls generator: t = 10s, D = 0.05, p t = 0.6ns, R = 50 r i Oscillograph F Oscillograph: R = 50 , t = 0.35ns, C 1pF r EHN00022 2 2007-04-19

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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