X-On Electronics has gained recognition as a prominent supplier of BAS21E6327HTSA1 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAS21E6327HTSA1 Diodes - General Purpose, Power, Switching are a product manufactured by Infineon. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAS21E6327HTSA1 Infineon

BAS21E6327HTSA1 electronic component of Infineon
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Part No.BAS21E6327HTSA1
Manufacturer: Infineon
Category: Diodes - General Purpose, Power, Switching
Description: Diode: switching; SMD; 250V; 0.25A; Package: Reel, tape; SOT23; 350mW
Datasheet: BAS21E6327HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0289 ea
Line Total: USD 0.29 
Availability - 291
Ship by Tue. 19 Nov to Fri. 22 Nov
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
32010
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.059
6000 : USD 0.0534
9000 : USD 0.0506
15000 : USD 0.0473
21000 : USD 0.0454
24000 : USD 0.0449
30000 : USD 0.0435
75000 : USD 0.0396

291
Ship by Tue. 19 Nov to Fri. 22 Nov
MOQ : 10
Multiples : 10
10 : USD 0.0289
100 : USD 0.0282
300 : USD 0.0277
1000 : USD 0.0274

35868
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1893
10 : USD 0.1262
100 : USD 0.066
1000 : USD 0.0589
3000 : USD 0.0463
9000 : USD 0.0421
45000 : USD 0.0379
99000 : USD 0.035

2799
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.35
10 : USD 0.1988
100 : USD 0.1078
315 : USD 0.056
865 : USD 0.0532

   
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Peak Reverse Voltage
Max Surge Current
If - Forward Current
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Vf - Forward Voltage
Ir - Reverse Current
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We are delighted to provide the BAS21E6327HTSA1 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS21E6327HTSA1 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAS21... Silicon Switching Diode For high-speed switching applications High breakdown voltage 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAS21 BAS21-03W BAS21U Type Package Configuration Marking BAS21 SOT23 single JSs BAS21-03W SOD323 single D BAS21U SC74 parallel triple JSs Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 200 V Diode reverse voltage V R 250 Peak reverse voltage V RM 250 mA Forward current I F 625 Peak forward current I FM Peak forward current I 625 mA FM Surge forward current, t = 10 s I 4 A FS Non-repetitive peak surge forward current I - FSM mW Total power dissipation P tot BAS21, T 70C 350 S BAS21-03W, T 124C 250 S BAS21U, T 122C 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 1 Pb-containing package may be available upon special request 1 2007-04-19BAS21... Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAS21 230 BAS21-03W 105 BAS21U 110 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 250 - - V Breakdown voltage V (BR) I = 100 A (BR) Reverse current I A R V = 200 V - - 0.1 R V = 200 V, T = 150 C - - 100 R A V Forward voltage V F I = 100 mA - - 1 F I = 200 mA - - 1.25 F AC Characteristics - - 5 pF Diode capacitance C T V = 0 V, f = 1 MHz R Reverse recovery time t - - 50 ns rr I = 30 mA, I = 30 mA, measured at I = 3mA, F R R R = 100 L Test circuit for reverse recovery time D.U.T. Puls generator: t = 1s, D = 0.05 p t = 0.6ns, R = 50 r i Oscillograph F Oscillograph: R = 50 , t = 0.35ns, C 1pF r EHN00018 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-04-19

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