BAT62...
Silicon Schottky Diode
Low barrier diode for detectors up to GHz
frequencies
Pb-free (RoHS compliant) package
BAT62 BAT62-03W BAT62-07W BAT62-02L BAT62-07L4
BAT62-02V BAT62-02LS
BAT62-02W
4 3
D1 D2
1 2
1 2
BAT62-09S
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Configuration L (nH) Marking
S
BAT62-02W** SCD80 single 0.6 62
BAT62 SOT143 anti-parallel pair 2 62s
BAT62-02L TSLP-2-1 single, leadless 0.4 L
BAT62-02LS* TSSLP-2-1 single, leadless 0.2 U
BAT62-02V SC79 single 0.6 k
BAT62-03W SOD323 single 1.8 white L
BAT62-07L4 TSLP-4-4 parallel pair, leadless 0.4 62
BAT62-07W SOT343 parallel pair 1.8 62s
BAT62-09S SOT363 parallel high, high isolation 1.6 69s
* Preliminary Data
** Not for new design
2014-02-13
1BAT62...
Maximum Ratings at T = 25 C, unless otherwise specified
A
Parameter Symbol Value Unit
40 V
Diode reverse voltage V
R
20 mA
Forward current I
F
Total power dissipation P
tot
BAT62, T 85 C 100
S
BAT62-02L, -07L4, -03W, T 108 C 100
S
BAT62-02W, -02V, T 109 C 100
S
BAT62-07W, T 103 C 100
S
BAT62-09S, T 105 C 100
S
150 C
Junction temperature T
j
Storage temperature T -55 ... 150
stg
Thermal Resistance
Parameter Symbol Value Unit
1)
Junction - soldering point R
thJS
BAT62 650
BAT62-02L, -07L4, -03W 420
BAT62-02W, 02V 410
BAT62-07W 470
BAT62-09S tbd
Electrical Characteristics at T = 25 C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
- - 10
Reverse current I A
R
V = 40 V
R
- 0.58 1 V
Forward voltage V
F
I = 2 mA
F
2)
- - 20 mV
Forward voltage matching V
F
I = 2 mA
F
1
For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2
V is the difference between lowest and highest V in a multiple diode component.
F F
2014-02-13
2