BAW 101 E6327 Infineon

BAW101... Silicon Switching Diode Electrically insulated high-voltage medium-speed diodes 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAW101 Type Package Configuration Marking BAW101 SOT143 parallel JPs Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 300 V Diode reverse voltage V R 300 Peak reverse voltage V RM 250 mA Forward current I F 500 Peak forward current I FM Peak forward current I 500 mA FM Surge forward current, t = 1 s I 4.5 A FS Non-repetitive peak surge forward current I - FSM 350 mW Total power dissipation P tot T 35C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 1 Pb-containing package may be available upon special request 1 2007-04-20BAW101... Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 330 thJS BAW101 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 300 - - V Breakdown voltage V (BR) I = 100 A (BR) Reverse current I A R V = 250 V - - 0.15 R V = 250 V, T = 150 C - - 50 R A - - 1.3 V Forward voltage V F I = 100 mA F AC Characteristics - 6 - pF Diode capacitance C T V = 0 V, f = 1 MHz R Reverse recovery time t - 1 - s rr I = 10 mA, I = 10 mA, measured at I = 1mA, F R R R = 100 L Test circuit for reverse recovery time D.U.T. Pulse generator: t = 10 s, D = 0.05, t = 0.6ns, p r R = 50 i Oscillograph F Oscillograph: R = 50 , t = 0.35ns, C 1pF r EHN00019 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-04-20