BB639C/BB659C... Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to in-lin matching assembly procedure Pb-free (RoHS compliant) package BB639C BB659C/-02V Type Package Configuration L (nH) Marking S BB639C SOD323 single 1.8 yellow S BB659C SCD80 single 0.6 HH BB659C-02V SC79 single 0.6 H Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 30 V Diode reverse voltage V R 35 Peak reverse voltage V RM ( R 5k ) 20 mA Forward current I F C Operating temperature range T -55 ... 150 op Storage temperature T -55 ... 150 stg 2011-06-15 1BB639C/BB659C... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 30 V - - 10 R V = 30 V, T = 85 C - - 200 R A AC Characteristics pF Diode capacitance C T V = 1 V, f = 1 MHz 36.5 39 42 R V = 2 V, f = 1 MHz 27 30.2 33.2 R V = 25 V, f = 1 MHz 2.5 2.72 3.05 R V = 28 V, f = 1 MHz 2.4 2.55 2.75 R 14.2 15.3 - Capacitance ratio C /C T1 T28 V = 1 V, V = 28 V, f = 1 MHz R R 9.5 11.1 - Capacitance ratio C /C T2 T25 V = 2 V, V = 25 V, f = 1 MHz R R 1) Capacitance matching C /C % T T V = 1V to 28V, f = 1 MHz, 7 diodes sequence, R BB639C - - 2.5 V = 1V to 28V , f = 1 MHz, 4 diodes sequence, R BB659C/-02V - 0.3 1 V = 1V to 28V, f = 1 MHz, 7 diodes sequence , R BB659C/-02V - 0.5 2 Series resistance r - 0.6 0.7 S V = 5 V, f = 470 MHz R Series inductance L - 0.6 - nH S 1 For details please refer to Application Note 047 2011-06-15 2