BB639/BB659... Silicon Variable Capacitance Diodes For tuning of extended frequency band in VHF TV / VTR tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to in-lin matching assembly procedure Pb-free (RoHS compliant) package BB639 BB659 Type Package Configuration L (nH) Marking S BB639 SOD323 single 1.8 yellow S BB659 SCD80 single 0.6 DE Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 30 V Diode reverse voltage V R 35 Peak reverse voltage V RM ( R 5k ) 20 mA Forward current I F C Operating temperature range T -55 ... 150 op Storage temperature T -55 ... 150 stg 2011-06-15 1BB639/BB659... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 30 V - - 10 R V = 30 V, T = 85 C - - 200 R A AC Characteristics pF Diode capacitance C T V = 1 V, f = 1 MHz 36 38.3 40 R V = 2 V, f = 1 MHz 27.7 29.75 31.8 R V = 25 V, f = 1 MHz 2.5 2.85 3.2 R V = 28 V, f = 1 MHz 2.4 2.6 2.9 R 13.5 14.7 - Capacitance ratio C /C T1 T28 V = 1 V, V = 28 V, f = 1 MHz R R 9.8 10.4 - Capacitance ratio C /C T2 T25 V = 2 V, V = 25 V, f = 1 MHz R R 1) Capacitance matching C /C % T T V = 1 V, V = 28 V, f = 1 MHz, 7 diode sequenc R R BB639 - - 2.5 V = 1 V, V = 28 V, f = 1 MHz, 4 diode sequenc R R BB659 - 0.3 1 V = 1 V, V = 28 V, f = 1 MHz, 7 diode sequenc R R BB659 - 0.4 2 Series resistance r - 0.65 0.7 S V = 5 V, f = 470 MHz R 1 For details please refer to Application Note 047. 2011-06-15 2