BBY53... Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO s in mobile communications equipment High ratio at low reverse voltage Pb-free (RoHS compliant) package BBY53-02L BBY53 BBY53-02V BBY53-05W BBY53-02W BBY53-03W Type Package Configuration L (nH) Marking S BBY53 SOT23 common cathode 2 S7s BBY53-02L TSLP-2-1 single, leadless 0.4 LL BBY53-02V SC79 single 0.6 L BBY53-02W SCD80 single 0.6 LL BBY53-03W SOD323 single 1.8 white 5 BBY53-05W SOT323 common cathode 1.4 S7s Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 6 V Diode reverse voltage V R 20 mA Forward current I F C Operating temperature range T -55 ... 125 op Storage temperature T -55 ... 150 stg 2011-06-15 1BBY53... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 4 V - - 10 R V = 4 V, T = 85 C - - 200 R A AC Characteristics pF Diode capacitance C T V = 1 V, f = 1 MHz 4.8 5.3 5.8 R V = 3 V, f = 1 MHz 1.85 2.4 3.1 R 1.8 2.2 2.6 Capacitance ratio C /C - T1 T3 V = 1 V, V = 3 V, f = 1 MHz R R Series resistance r - 0.47 - S V = 1 V, f = 1 GHz R 2011-06-15 2