BBY 55-02V H6327 Infineon

BBY55... Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO s in mobile communications equipment Very low capacitance spread Pb-free (RoHS compliant) package BBY55-02V BBY55-02W BBY55-03W Type Package Configuration L (nH) Marking S BBY55-02V SC79 single 0.6 7 BBY55-02W SCD80 single 0.6 77 BBY55-03W SOD323 single 1.8 white 7 Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 16 V Diode reverse voltage V R 20 mA Forward current I F C Operating temperature range T -55 ... 150 op Storage temperature T -55 ... 150 stg 2011-06-15 1BBY55... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 15 V - - 3 R V = 15 V, T = 85 C - - 100 R A AC Characteristics pF Diode capacitance C T V = 1 V, f = 1 MHz 17.5 18.6 19.6 R V = 2 V, f = 1 MHz 14 15 16 R V = 3 V, f = 1 MHz 11.6 12.6 13.6 R V = 4 V, f = 1 MHz 10 11 12 R V = 10 V, f = 1 MHz 5.5 6 6.5 R 2 2.5 3 Capacitance ratio C /C T2 T10 V = 2 V, V = 10 V, f = 1 MHz R R Series resistance r - 0.15 0.4 S V = 5 V, f = 470 MHz R 2011-06-15 2