BBY58... Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO s in mobile communications equipment For low frequency control elements such as TCXOs and VCXOs Very low capacitance spread 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BBY58-02L/V BBY58-05W BBY58-06W BBY58-02W BBY58-03W Type Package Configuration L (nH) Marking S BBY58-02L TSLP-2-1 single, leadless 0.4 88 BBY58-02V SC79 single 0.6 8 BBY58-02W SCD80 single 0.6 88 BBY58-03W SOD323 single 0.6 8 yel. BBY58-05W SOT323 common cathode 1.4 B5s BBY58-06W SOT323 common anode 1.4 B6s Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 10 V Diode reverse voltage V R 20 mA Forward current I F C Operating temperature range T -55 ... 150 op Storage temperature T -55 ... 150 stg 1 Pb-containing package may be available upon special request 2007-09-19 1BBY58... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 8 V - - 10 R V = 8 V, T = 85 C - - 100 R A AC Characteristics pF Diode capacitance C T V = 1 V, f = 1 MHz 17.5 18.3 19.3 R V = 2 V, f = 1 MHz 11.4 12.35 13.3 R V = 3 V, f = 1 MHz 7.8 8.6 9.3 R V = 4 V, f = 1 MHz 5.5 6 6.6 R V = 6 V, f = 1 MHz 3.8 4.7 5.5 R 1.9 2.15 2.4 Capacitance ratio C /C - T1 T3 V = 1 V, V = 3 V, f = 1 MHz R R 2.7 3.05 3.5 Capacitance ratio C /C T1 T4 V = 1 V, V = 4 V, f = 1 MHz R R Capacitance ratio C /C 1.15 1.3 1.45 T4 T6 V = 4 V, V = 6 V, f = 1 MHz R R Series resistance r S V = 1 V, f = 470 MHz, BBY58-02L, -07L4 - 0.3 - R V = 1 V, f = 470 MHz, all other - 0.25 - R 2007-09-19 2