BBY65... Silicon Tuning Diode High Q hyperabrupt tuning diode Very low capacitance spread Designed for low tuning voltage operation for VCO s in mobile communications equipment For low frequency control elements such as TCXOS and VCXOS High capacitance ratio and good C-V linearity Pb-free (RoHS compliant) package BBY65-02V Type Package Configuration L (nH) Marking S BBY65-02V SC79 single 0.6 F Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 15 V Diode reverse voltage V R 50 mA Forward current I F C Operating temperature range T -55 ... 150 op Storage temperature T -55 ... 150 stg 2011-06-15 1BBY65... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 10 V - - 10 R V = 10 V, T = 85 C - - 100 R A AC Characteristics pF Diode capacitance C T V = 0.3 V, f = 1 MHz 28.2 29.5 30.8 R V = 1 V, f = 1 MHz - 20.25 - R V = 2 V, f = 1 MHz - 9.8 - R V = 3 V, f = 1 MHz - 4.45 - R V = 4.7 V, f = 1 MHz 2.6 2.7 2.8 R Capacitance ratio C / 10 10.9 - pF T0.3 V = 0.3 V, V = 4.7 V C R R T4.7 - 4.55 - pF Capacitance ratio C /C T1 T3 V = 1 V, V = 3 V R R Series resistance r - 0.6 0.9 S V = 1 V, f = 470 MHz R 2011-06-15 2