BBY 66-02V H6327 Infineon

BBY66... Silicon Tuning Diodes High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO s in mobile communications equipment Very low capacitance spread 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BBY66-02V BBY66-05 BBY66-05W Type Package Configuration L (nH) Marking S BBY66-02V SC79 single 0.6 h BBY66-05 SOT23 common cathode 1.8 O1s / O2s** BBY66-05W SOT323 common cathode 1.4 OBs **For differences see next page Capacitance groups Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 12 V Diode reverse voltage V R 50 mA Forward current I F C Operating temperature range T -55 ... 150 op Storage temperature T -55 ... 150 stg 1 Pb-containing package may be available upon special request 1 2007-04-20BBY66... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 10 V - - 20 R V = 10 V, T = 65 C - - 200 R A AC Characteristics 1) pF Diode capacitance C T V = 1 V, f = 1 MHz 66 68.7 71.5 R V = 2 V, f = 1 MHz 33 35.4 38 R V = 3 V, f = 1 MHz 19.7 20.95 22.2 R V = 4.5 V, f = 1 MHz 12 12.7 13.5 R 5 5.41 - Capacitance ratio C /C T1 T4.5 V = 1 V, V = 4.5 V R R Series resistance r - 0.25 0.4 S V = 1 V, f = 470 MHz R 1 Capacitance groups at 1V, coded 01 02 (only BBY66-05) C /groups 01 02 T C min 66pF 68.5pF 1V C max 69pF 71.5pF 1V Deliveries contain either C group 01 or group 02 (marked on reel). T No direct order of C groups possible T 2 2007-04-20