BCR108E6327HTSA1 Infineon

BCR108... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =2.2 k , R =47 k ) 1 2 BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR108 BCR108S BCR108W C C1 B2 E2 3 6 54 R 2 R 1 R 1 TR2 TR1 R 1 R 2 R 2 1 2 1 2 3 E1 B1 C2 B E EHA07174 EHA07184 Type Marking Pin Configuration Package BCR108 WHs 1=B 2=E 3=C - - - SOT23 BCR108S WHs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR108W WHs 1=B 2=E 3=C - - - SOT323 2011-08-19 1BCR108... Maximum Ratings Parameter Symbol Value Unit 50 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO Input forward voltage V 20 i(fwd) Input reverse voltage V 5 i(rev) 100 mA Collector current I C mW Total power dissipation- P tot BCR108, T 102C 200 S BCR108S, T 115C 250 S BCR108W, T 124C 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BCR108 240 BCR108S 140 BCR108W 105 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-08-19 2