X-On Electronics has gained recognition as a prominent supplier of BCR112E6327HTSA1 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. BCR112E6327HTSA1 Bipolar Transistors - Pre-Biased are a product manufactured by Infineon. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

BCR112E6327HTSA1 Infineon

BCR112E6327HTSA1 electronic component of Infineon
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Part No.BCR112E6327HTSA1
Manufacturer: Infineon
Category: Bipolar Transistors - Pre-Biased
Description: Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R
Datasheet: BCR112E6327HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1885 ea
Line Total: USD 0.19 
Availability - 10804
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17460
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0465
6000 : USD 0.0461
9000 : USD 0.0428
15000 : USD 0.0424
21000 : USD 0.0419
24000 : USD 0.0378
30000 : USD 0.0374
45000 : USD 0.034
75000 : USD 0.0336
99000 : USD 0.0315
150000 : USD 0.0312
300000 : USD 0.0309

109
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2219
10 : USD 0.1493
25 : USD 0.1162
100 : USD 0.0471

10804
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1885
10 : USD 0.1172
100 : USD 0.049
1000 : USD 0.0447
3000 : USD 0.0351
9000 : USD 0.033
24000 : USD 0.0298
45000 : USD 0.0287
99000 : USD 0.0267

7483
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 25
Multiples : 1
25 : USD 0.0732
100 : USD 0.0637
338 : USD 0.0488
930 : USD 0.0461

17460
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0465
6000 : USD 0.0461
9000 : USD 0.0428
15000 : USD 0.0424
21000 : USD 0.0419
24000 : USD 0.0378
30000 : USD 0.0374
45000 : USD 0.034
75000 : USD 0.0336
99000 : USD 0.0315
150000 : USD 0.0312
300000 : USD 0.0309

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Packaging
Brand
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We are delighted to provide the BCR112E6327HTSA1 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCR112E6327HTSA1 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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BCR112... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4.7k , R =4.7k ) 1 2 Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR112 BCR112W C 3 R 1 R 2 1 2 B E EHA07184 Type Marking Pin Configuration Package BCR112 WFs 1=B 2=E 3=C - - - SOT23 BCR112W WFs 1=B 2=E 3=C - - - SOT323 Maximum Ratings Parameter Symbol Value Unit 50 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO Input forward voltage V 30 i(fwd) Input reverse voltage V 10 i(rev) 100 mA Collector current I C mW Total power dissipation- P tot BCR112, T 102C 200 S BCR112W, T 124C 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 2011-09-15 1BCR112... Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BCR112 240 BCR112W 105 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 50 - - Collector-emitter breakdown voltage V V (BR)CEO I = 100 A, I = 0 C B Collector-base breakdown voltage V 50 - - (BR)CBO I = 10 A, I = 0 C E Collector-base cutoff current I - - 100 nA CBO V = 40 V, I = 0 CB E - - 1.61 mA Emitter-base cutoff current I EBO V = 10 V, I = 0 EB C 1) 20 - - - DC current gain h FE I = 5 mA, V = 5 V C CE 1) Collector-emitter saturation voltage V - - 0.3 V CEsat I = 10 mA, I = 0.5 mA C B Input off voltage V 0.8 - 1.5 i(off) I = 100 A, V = 5 V C CE Input on voltage V 1 - 2.5 i(on) I = 2 mA, V = 0.3 V C CE Input resistor R 3.2 4.7 6.2 k 1 Resistor ratio R /R 0.9 1 1.1 - 1 2 AC Characteristics - 140 - MHz Transition frequency f T I = 10 mA, V = 5 V, f = 100 MHz C CE - 3 - pF Collector-base capacitance C cb V = 10 V, f = 1 MHz CB 1 Pulse test: t < 300s D < 2% 2011-09-15 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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