BCR 133 E6327 Infineon

BCR133... NPN Silicon Digital Transistor Switching in circuit, inverter, interface circuit, drive circuit Built in bias resistor (R = 10 k , R = 10 k ) 1 2 BCR133S: Two internally isolated transistors with good matching in one multichip package BCR133S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR133/W BCR133S C C1 B2 E2 3 6 54 R 2 R 1 R 1 TR2 TR1 R 1 R 2 R 2 1 2 1 2 3 E1 B1 C2 B E EHA07174 EHA07184 Type Marking Pin Configuration Package BCR133 WCs 1=B 2=E 3=C - - - SOT23 BCR133S WCs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR133W WCs 1=B 2=E 3=C - - - SOT323 2011-08-19 1BCR133... Maximum Ratings Parameter Symbol Value Unit 50 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO Input forward voltage V 40 i(fwd) Input reverse voltage V 10 i(rev) 100 mA Collector current I C mW Total power dissipation- P tot BCR133, T 102C 200 S BCR133S, T 115C 250 S BCR133W, T 124C 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BCR133 240 BCR133S 140 BCR133W 105 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-08-19 2