BCR183... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = 10 k , R = 10 k ) 1 2 BCR183S / U: Two internally isolated transistors with good matching in one multichip package BCR183S / U: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR183 BCR183S BCR183W BCR183U C C1 B2 E2 3 6 54 R 2 R 1 R 1 TR2 TR1 R 1 R 2 R 2 1 2 1 2 3 B E E1 B1 C2 EHA07173 EHA07183 Type Marking Pin Configuration Package BCR183 WMs 1=B 2=E 3=C - - - SOT23 BCR183S WMs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR183U WMs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 BCR183W WMs 1=B 2=E 3=C - - - SOT323 2011-08-30 1BCR183... Maximum Ratings Parameter Symbol Value Unit 50 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO Input forward voltage V 40 i(fwd) Input reverse voltage V 10 i(rev) 100 mA Collector current I C mW Total power dissipation- P tot BCR183, T 102C 200 S BCR183S, T 115C 250 S BCR183U, T 118C 250 S BCR183W, T 124C 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BCR183 240 BCR183S 140 BCR183U 133 BCR183W 105 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-08-30 2