BCR183...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R = 10 k , R = 10 k )
1 2
BCR183S / U: Two internally isolated
transistors with good matching
in one multichip package
BCR183S / U: For orientation in reel see
package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCR183 BCR183S
BCR183W BCR183U
C
C1 B2 E2
3 6 54
R 2
R
1
R
1 TR2
TR1 R
1
R 2
R
2
1 2 1 2 3
B E E1 B1 C2
EHA07173
EHA07183
Type Marking Pin Configuration Package
BCR183 WMs 1=B 2=E 3=C - - - SOT23
BCR183S WMs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BCR183U WMs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
BCR183W WMs 1=B 2=E 3=C - - - SOT323
2011-08-30
1BCR183...
Maximum Ratings
Parameter Symbol Value Unit
50 V
Collector-emitter voltage V
CEO
50
Collector-base voltage V
CBO
Input forward voltage V 40
i(fwd)
Input reverse voltage V 10
i(rev)
100 mA
Collector current I
C
mW
Total power dissipation- P
tot
BCR183, T 102C 200
S
BCR183S, T 115C 250
S
BCR183U, T 118C 250
S
BCR183W, T 124C 250
S
150 C
Junction temperature T
j
Storage temperature T -65 ... 150
stg
Thermal Resistance
Parameter Symbol Value Unit
1)
K/W
Junction - soldering point R
thJS
BCR183 240
BCR183S 140
BCR183U 133
BCR183W 105
1
For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-08-30
2