BCR198... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 47 k , R2 = 47 k ) BCR198S: Two internally isolated transistors with good matching in one multichip package BCR198S: For orientation in reel see package information below 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR198/F BCR198S BCR198W C C1 B2 E2 3 6 54 R 2 R 1 R 1 TR2 TR1 R 1 R 2 R 2 1 2 1 2 3 B E E1 B1 C2 EHA07173 EHA07183 Type Marking Pin Configuration Package BCR198 WRs 1=B 2=E 3=C - - - SOT23 BCR198F WRs 1=B 2=E 3=C - - - TSFP-3 BCR198S WRs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR198W WRs 1=B 2=E 3=C - - - SOT323 1 Pb-containing package may be available upon special request 1 2009-06-16BCR198... Maximum Ratings Parameter Symbol Value Unit 50 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO Input forward voltage V 80 i(fwd) Input reverse voltage V 10 i(rev) 100 mA Collector current I C mW Total power dissipation- P tot BCR198, T 102C 200 S BCR198F, T 128C 250 S BCR198S, T 115C 250 S BCR198W, T 124C 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BCR198 240 BCR198F 90 BCR198S 140 BCR198W 105 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2009-06-16