X-On Electronics has gained recognition as a prominent supplier of BCR 22PN H6433 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. BCR 22PN H6433 Bipolar Transistors - Pre-Biased are a product manufactured by Infineon. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

BCR 22PN H6433 Infineon

BCR 22PN H6433 electronic component of Infineon
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Part No.BCR 22PN H6433
Manufacturer: Infineon
Category: Bipolar Transistors - Pre-Biased
Description: Infineon Technologies Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
Datasheet: BCR 22PN H6433 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3996 ea
Line Total: USD 0.4 
Availability - 15828
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15828
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3996
10 : USD 0.3049
100 : USD 0.1732
1000 : USD 0.0901
2500 : USD 0.0797
10000 : USD 0.0636
20000 : USD 0.0589
50000 : USD 0.0554

   
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We are delighted to provide the BCR 22PN H6433 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCR 22PN H6433 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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BCR22PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit 4 5 3 Two (galvanic) internal isolated NPN/PNP 6 2 1 Transistors in one package Built in bias resistor NPN and PNP (R =22 k , R =22 k ) 1 2 C1 B2 E2 6 54 Pb-free (RoHS compliant) package R 2 Qualified according AEC Q101 R TR2 1 TR1 R 1 R 2 1 2 3 E1 B1 C2 EHA07176 Tape loading orientation Marking on SOT-363 package Top View (for example W1s) 6 5 4 corresponds to pin 1 of device W1s Position in tape: pin 1 12 3 opposite of feed hole side Direction of Unreeling EHA07193 Type Marking Pin Configuration Package BCR22PN WPs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings for NPN and PNP Types Parameter Symbol Value Unit 50 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO Input forward voltage V 60 i(fwd) Input reverse voltage V 10 i(rev) 100 mA DC collector current I C 250 mW Total power dissipation, T = 115 C P S tot 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance 1) Junction - soldering point R 140 K/W thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-07-28 1BCR22PN Electrical Characteristics at T =25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics for NPN and PNP Types 50 - - V Collector-emitter breakdown voltage V (BR)CEO I = 100 A, I = 0 C B 50 - - Collector-base breakdown voltage V (BR)CBO I = 10 A, I = 0 C E Collector cutoff current I - - 100 nA CBO V = 40 V, I = 0 CB E - - 350 A Emitter cutoff current I EBO V = 10 V, I = 0 EB C 50 - - DC current gain 1) h - FE I = 5 mA, V = 5 V C CE - - 0.3 V Collector-emitter saturation voltage1) V CEsat I = 10 mA, I = 0.5 mA C B Input off voltage V 0.8 - 1.5 i(off) I = 100 A, V = 5 V C CE Input on Voltage V 1 - 2.5 i(on) I = 2 mA, V = 0.3 V C CE 15 22 29 Input resistor R k 1 0.9 1 1.1 Resistor ratio R /R - 1 2 AC Characteristics for NPN and PNP Types - 130 - MHz Transition frequency f T I = 10 mA, V = 5 V, f = 100 MHz C CE - 3 - pF Collector-base capacitance C cb V = 10 V, f = 1 MHz CB 1) Pulse test: t < 300s D < 2% 2011-07-28 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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