BCR523... NPN Silicon Digital Transistors Switching circuit, inverter circuit, driver circuit Built in bias resistor (R = 1 k , R = 10 k ) 1 2 BCR523U: Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR523 BCR523U C C1 B2 E2 3 6 54 R 2 R 1 R1 TR2 TR1 R 1 R 2 R 2 1 2 3 1 2 B E E1 B1 C2 EHA07174 EHA07184 Type Marking Pin Configuration Package BCR523 XGs 1=B 2=E 3=C - - - SOT23 BCR523U XGs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Value Unit 50 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO Input forward voltage V 12 i(fwd) Input reverse voltage V 5 i(rev) 500 mA Collector current I C mW Total power dissipation- P tot T 79 C, BCR523 330 S T 115 C , BCR523U 330 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 2011-07-28 1BCR523... Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BCR523 215 BCR523U 105 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 50 - - Collector-emitter breakdown voltage V V (BR)CEO I = 100 A, I = 0 C B Collector-base breakdown voltage V 50 - - (BR)CBO I = 10 A, I = 0 C E Collector-base cutoff current I - - 100 nA CBO V = 50 V, I = 0 CB E - - 0.72 mA Emitter-base cutoff current I EBO V = 5 V, I = 0 EB C 70 - - - DC current gain- h FE I = 50 mA, V = 5 V C CE 2) Collector-emitter saturation voltage V - - 0.3 V CEsat I = 50 mA, I = 2.5 mA C B Input off voltage V 0.3 - 1 i(off) I = 100 A, V = 5 V C CE Input on voltage V 0.4 - 1.4 i(on) I = 10 mA, V = 0.3 V C CE Input resistor R 0.7 1 1.3 k 1 Resistor ratio R /R 0.09 0.1 0.11 - 1 2 AC Characteristics - 100 - MHz Transition frequency f T I = 50 mA, V = 5 V, f = 100 MHz C CE 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2 Pulse test: t < 300s D < 2% 2011-07-28 2