BDP948H6327XTSA1 Infineon

BDP948 BDP950 BDP954 PNP Silicon AF Power Transistors For AF driver and output stages 4 3 High collector current 2 1 High current gain Low collector-emitter saturation voltage Complementary types: BDP947, BDP949 BDP953 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BDP948 BDP948 1=B 2=C 3=E 4=C - - SOT223 BDP950 BDP950 1=B 2=C 3=E 4=C - - SOT223 BDP954 BCP954 1=B 2=C 3=E 4=C - - SOT223 1 2011-10-05BDP948 BDP950 BDP954 Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BDP948 45 BDP950 60 BDP954 100 Collector-base voltage V CBO BDP948 45 BDP950 60 BDP954 120 5 Emitter-base voltage V EBO 3 A Collector current I C 5 Peak collector current, t 10 ms I p CM 200 mA Base current I B 500 Peak base current I BM 5 W Total power dissipation- P tot T 100 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 10 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2 2011-10-05