CY15B004J-SXE Infineon

Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comCY15B004J 2 4-Kbit (512 8) Serial (I C) Automotive-E F-RAM 4-Kbit (512 8) Serial (I2C) Automotive-E F-RAM Features Functional Description The CY15B004J is a 4-Kbit nonvolatile memory employing an 4-Kbit ferroelectric random access memory (F-RAM) logically advanced ferroelectric process. A ferroelectric random access organized as 512 8 13 memory or F-RAM is nonvolatile and performs reads and writes High-endurance 10 trillion (10 ) read/writes similar to a RAM. It provides reliable data retention for 121 years 121-year data retention (See Data Retention and Endurance while eliminating the complexities, overhead, and system-level on page 10) reliability problems caused by EEPROM and other nonvolatile NoDelay writes memories. Advanced high-reliability ferroelectric process 2 Unlike EEPROM, the CY15B004J performs write operations at Fast 2-wire Serial interface (I C) bus speed. No write delays are incurred. Data is written to the Up to 1-MHz frequency memory array immediately after each byte is successfully 2 Direct hardware replacement for serial (I C) EEPROM transferred to the device. The next bus cycle can commence Supports legacy timings for 100 kHz and 400 kHz without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile Low power consumption memories. Also, F-RAM exhibits much lower power during writes 120 A active current at 100 kHz than EEPROM since write operations do not require an internally 20 A (typ) standby current elevated power supply voltage for write circuits. The CY15B004J 13 Voltage operation: V = 3.0 V to 3.6 V DD is capable of supporting 10 read/write cycles, or 10 million times more write cycles than EEPROM. Automotive-E temperature: 40 C to +125 C These capabilities make the CY15B004J ideal for nonvolatile 8-pin small outline integrated circuit (SOIC) package memory applications, requiring frequent or rapid writes. AEC Q100 Grade 1 compliant Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the Restriction of hazardous substances (RoHS) compliant long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The CY15B004J provides substantial benefits to users of serial 2 (I C) EEPROM as a hardware drop-in replacement. The device specifications are guaranteed over an automotive-e temperature range of 40 C to +125 C. Logic Block Diagram 512 x 8 Address Counter F-RAM Array Latch 9 8 Serial to Parallel SDA Data Latch Converter 8 SCL Control Logic WP A2-A1 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-10549 Rev. *C Revised November 21, 2018