Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comCY15B102QSN CY15V102QSN Excelon-Ultra 2-Mbit (256K 8) Quad SPI F-RAM CY15B102QSN/CY15V102QSN, Excelon-Ultra 2-Mbit (256K 8) Quad SPI F-RAM Operating temperature: 40 C to +85 C Features 8-pin Small Outline Integrated Circuit (SOIC) package 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K 8 Restriction of hazardous substances (RoHS) compliant 14 Virtually unlimited endurance of 100 trillion (10 ) read/write Functional Description cycles 151-year data retention (See Data Retention and Endurance The Excelon-Ultra CY15X102QSN is a high-performance, on page 74) 2-Mbit nonvolatile memory employing an advanced ferroelectric NoDelay writes process. A ferroelectric random access memory or F-RAM is Advanced high-reliability ferroelectric process nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating Single and Multi I/O SPI the complexities, overhead, and system-level reliability problems Serial bus interface SPI protocols caused by serial flash and other nonvolatile memories. Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers Unlike serial flash, the CY15X102QSN performs write operations at bus speed. No write delays are incurred. Data is written to the Supports SPI mode 0 (0, 0) for all DDR mode transfers memory array immediately after each byte is successfully Extended I/O SPI protocols transferred to the device. The next bus cycle can commence Dual SPI (DPI) protocols without the need for data polling. In addition, the product offers Quad SPI (QPI) protocols substantial write endurance compared to other nonvolatile 14 SPI Clock Frequency memories. The CY15X102QSN is capable of supporting 10 read/write cycles, or 100 million times more write cycles than Up to 108-MHz frequency SPI SDR EEPROM. These capabilities make the CY15X102QSN ideal for Up to 54-MHz frequency SPI DDR nonvolatile memory applications, requiring frequent or rapid Execute-in-place (XIP) for Memory Read/Write writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls Write Protection, Data Security, and Data Integrity where the long write time of serial flash can cause data loss. Hardware Protection using the Write Protect (WP) Pin The CY15X102QSN combines a 2-Mbit F-RAM with the high-speed Quad SPI (QPI) SDR and DDR interfaces which Software Block Protection enhances the nonvolatile write capability of F-RAM technology. Embedded ECC and CRC for enhanced data integrity The device incorporates a read-only Device ID and Unique ID ECC detects and corrects 1-bit error. If a 2-bit error occurs, features which allow the SPI bus master to determine the it does not correct but reports through the ECC Status register manufacturer, product density, product revision and unique ID for CRC detects any accidental change to raw data each part. The device is also offered with a unique serial number that is read-only and can be used to identify a board or a system. Extended electronic signatures The device supports on-die ECC logic which can detect and Device ID includes manufacturer ID and product ID correct 1-bit error in every 8-byte unit data. The device also Unique ID extends capability to report 2-bit error in 8-byte unit data. The User programmable Serial Number CY15X102QSN also supports the Cyclic Redundancy Check (CRC) feature which can be used to check the data integrity of Dedicated 256-byte special sector F-RAM the stored data in the memory array. Dedicated special sector write and read Content can survive up to three standard reflow cycles Low-power consumption at high speed 10 mA (typ) active current for 108 MHz SPI SDR 16 mA (typ) active current for 108 MHz QSPI SDR and 54-MHz QSPI DDR 110 A (typ) standby current 0.80 A (typ) deep power down mode current 0.1 A (typ) hibernate mode current Low-voltage operation: CY15V102QSN: V = 1.71 V to 1.89 V DD CY15B102QSN: V = 1.8 V to 3.6 V DD Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-26767 Rev. *B Revised March 19, 2020