X-On Electronics has gained recognition as a prominent supplier of CY15B104Q-PZXI F-RAM across the USA, India, Europe, Australia, and various other global locations. CY15B104Q-PZXI F-RAM are a product manufactured by Infineon. We provide cost-effective solutions for F-RAM, ensuring timely deliveries around the world.

CY15B104Q-PZXI Infineon

CY15B104Q-PZXI electronic component of Infineon
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See Product Specifications
Part No.CY15B104Q-PZXI
Manufacturer: Infineon
Category: F-RAM
Description: F-RAM F-RAM Memory Serial
Datasheet: CY15B104Q-PZXI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.141 ea
Line Total: USD 6.14 
Availability - 77
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
77
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 6.141
10 : USD 5.6695
100 : USD 5.0945
250 : USD 5.0715
500 : USD 4.83
795 : USD 4.6345
2385 : USD 4.485
5565 : USD 4.4275
10335 : USD 4.3125

   
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We are delighted to provide the CY15B104Q-PZXI from our F-RAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY15B104Q-PZXI and other electronic components in the F-RAM category and beyond.

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CY15B104Q 4-Mbit (512 K 8) Serial (SPI) F-RAM 4-Mbit (512 K 8) Serial (SPI) F-RAM Features Functional Description 4-Mbit ferroelectric random access memory (F-RAM) logically The CY15B104Q is a 4-Mbit nonvolatile memory employing an organized as 512 K 8 advanced ferroelectric process. A ferroelectric random access 14 memory or F-RAM is nonvolatile and performs reads and writes High-endurance 100 trillion (10 ) read/writes similar to a RAM. It provides reliable data retention for 151 years 151-year data retention (See the Data Retention and while eliminating the complexities, overhead, and system-level Endurance table) reliability problems caused by serial flash, EEPROM, and other NoDelay writes nonvolatile memories. Advanced high-reliability ferroelectric process Unlike serial flash and EEPROM, the CY15B104Q performs Very fast serial peripheral interface (SPI) write operations at bus speed. No write delays are incurred. Data Up to 40-MHz frequency is written to the memory array immediately after each byte is Direct hardware replacement for serial flash and EEPROM successfully transferred to the device. The next bus cycle can Supports SPI mode 0 (0, 0) and mode 3 (1, 1) commence without the need for data polling. In addition, the product offers substantial write endurance compared to other Sophisticated write protection scheme nonvolatile memories. The CY15B104Q is capable of supporting Hardware protection using the Write Protect (WP) pin 14 10 read/write cycles, or 100 million times more write cycles Software protection using Write Disable instruction than EEPROM. Software block protection for 1/4, 1/2, or entire array These capabilities make the CY15B104Q ideal for nonvolatile Device ID memory applications, requiring frequent or rapid writes. Manufacturer ID and Product ID Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the Low power consumption long write time of serial flash or EEPROM can cause data loss. 300 A active current at 1 MHz The CY15B104Q provides substantial benefits to users of serial 100 A (typ) standby current EEPROM or flash as a hardware drop-in replacement. The 3 A (typ) sleep mode current CY15B104Q uses the high-speed SPI bus, which enhances the Low-voltage operation: V = 2.0 V to 3.6 V high-speed write capability of F-RAM technology. The device DD incorporates a read-only Device ID that allows the host to Industrial temperature: 40 C to +85 C determine the manufacturer, product density, and product revision. The device specifications are guaranteed over an Packages industrial temperature range of 40 C to +85 C. 8-pin small outline integrated circuit (SOIC) package For a complete list of related documentation, click here. 8-pin thin dual flat no leads (TDFN) package Restriction of hazardous substances (RoHS) compliant Logic Block Diagram WP Instruction Decoder CS Clock Generator Control Logic HOLD Write Protect SCK 512 K x 8 F-RAM Array Instruction Register 19 8 Address Register Counter SI SO Data OI/ Register 3 Nonvolatile Status Register Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-94240 Rev. *E Revised November 9, 2017CY15B104Q Contents Pinouts ..............................................................................3 Maximum Ratings ........................................................... 12 Pin Definitions ..................................................................3 Operating Range ............................................................. 12 Overview ............................................................................4 DC Electrical Characteristics ........................................ 12 Memory Architecture ...................................................4 Data Retention and Endurance ..................................... 13 Serial Peripheral Interface (SPI) Bus ..........................4 Capacitance .................................................................... 13 SPI Overview ...............................................................4 Thermal Resistance ........................................................ 13 SPI Modes ...................................................................5 AC Test Conditions ........................................................ 13 Power Up to First Access ............................................6 AC Switching Characteristics ....................................... 14 Command Structure ....................................................6 Power Cycle Timing ....................................................... 16 WREN - Set Write Enable Latch .................................6 Ordering Information ...................................................... 17 WRDI - Reset Write Enable Latch ...............................6 Ordering Code Definitions ......................................... 17 Status Register and Write Protection .............................7 Package Diagrams .......................................................... 18 Read Status Register (RDSR) .....................................7 Acronyms ........................................................................ 20 Write Status Register (WRSR) ....................................7 Document Conventions ................................................. 20 Memory Operation ............................................................8 Units of Measure ....................................................... 20 Write Operation ...........................................................8 Document History Page ................................................. 21 Read Operation ...........................................................8 Sales, Solutions, and Legal Information ...................... 22 Fast Read Operation ...................................................8 Worldwide Sales and Design Support ....................... 22 HOLD Pin Operation .................................................10 Products .................................................................... 22 Sleep Mode ...............................................................10 PSoC Solutions ...................................................... 22 Device ID ...................................................................11 Cypress Developer Community ................................. 22 Endurance .................................................................11 Technical Support ..................................................... 22 Document Number: 001-94240 Rev. *E Page 2 of 22

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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