CY15B128Q-SXE Infineon

Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comCY15B128Q 128-Kbit (16K 8) Automotive-E Serial (SPI) F-RAM 128-Kbit (16K 8) Automotive-E Serial (SPI) F-RAM Features Functional Description 128-Kbit ferroelectric random access memory (F-RAM) The CY15B128Q is a 128-Kbit nonvolatile memory employing an logically organized as 16K 8 advanced ferroelectric process. An F-RAM is nonvolatile and 13 High-endurance 10 trillion (10 ) read/writes performs reads and writes similar to a RAM. It provides reliable 121-year data retention (See Data Retention and Endurance data retention for 121 years while eliminating the complexities, on page 13) overhead, and system-level reliability problems caused by serial NoDelay writes flash, EEPROM, and other nonvolatile memories. Advanced high-reliability ferroelectric process Unlike serial flash and EEPROM, the CY15B128Q performs Very fast serial peripheral interface (SPI) write operations at bus speed. No write delays are incurred. Data Up to 33-MHz frequency is written to the memory array immediately after each byte is Direct hardware replacement for serial flash and EEPROM successfully transferred to the device. The next bus cycle can Supports SPI mode 0 (0, 0) and mode 3 (1, 1) commence without the need for data polling. In addition, the Sophisticated write-protection scheme product offers substantial write endurance compared with other Hardware protection using the Write Protect (WP) pin nonvolatile memories. The CY15B128Q is capable of supporting 13 Software protection using Write Disable instruction 10 read/write cycles, or 10 million times more write cycles than Software block protection for 1/4, 1/2, or entire array EEPROM. Device ID These capabilities make the CY15B128Q ideal for nonvolatile Manufacturer ID and Product ID memory applications requiring frequent or rapid writes. Examples range from data logging, where the number of write Low power consumption cycles may be critical, to demanding industrial controls where the 5-mA active current at 33 MHz long write time of serial flash or EEPROM can cause data loss. 500- A standby current 12- A sleep mode current The CY15B128Q provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The Low-voltage operation: V = 2.7 V to 3.6 V DD CY15B128Q uses the high-speed SPI bus, which enhances the Automotive-E temperature: 40 C to +125 C high-speed write capability of F-RAM technology. The device 8-pin small outline integrated circuit (SOIC) package incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product AEC Q100 Grade 1 compliant revision. The device specifications are guaranteed over an Restriction of hazardous substances (RoHS) compliant automotive-e range of 40 C to +125 C. Logic Block Diagram WP Instruction Decoder CS Clock Generator Control Logic HOLD Write Protect SCK 16 K x 8 F-RAM Array Instruction Register 14 8 Address Register Counter SI SO Data OI/ Register 3 Nonvolatile Status Register Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-97631 Rev. *C Revised May 31, 2018