X-On Electronics has gained recognition as a prominent supplier of DD100N16SHPSA1 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DD100N16SHPSA1 Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

DD100N16SHPSA1 Infineon

DD100N16SHPSA1 electronic component of Infineon
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Part No.DD100N16SHPSA1
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Rectifier Diode Module (non Schottky) 1600V 130A BG-SB20-1
Datasheet: DD100N16SHPSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 28.754 ea
Line Total: USD 28.75 
Availability - 25
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
25
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 28.754
12 : USD 21.813
24 : USD 20.878
60 : USD 20.526

   
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We are delighted to provide the DD100N16SHPSA1 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD100N16SHPSA1 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Technische Information / technical information Netz-Dioden-Modul DD100N16S Rectifier Diode Module Key Parameters V / V 1600 V DRM RRM I 130 A (T =100 C) FAVM C I 2500 A FSM 3570A (T =55C) C V 0,87 V T0 r 2,54 m T R 0,19 K/W thJC Base plate 20 mm Weight 75 g For type designation please refer to actual short form catalog Technische Information / technical information Netz-Dioden-Modul DD100N16S Rectifier Diode Module DD100N16S Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1600 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM repetitive peak reverse voltages 1700 V Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage 210 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 134 A Dauergrenzstrom T = 100 C I C FAVM average on-state current 2500 A Stostrom-Grenzwert T = 25C, t = 10ms I vj P FSM 2000 A surge current T = T , t = 10ms vj vj max P 31250 As Grenzlastintegral T = 25C, t = 10ms It vj P 20000 As It-value T = T , t = 10ms vj vj max P Charakteristische Werte / Characteristic values 1,6 V Durchlaspannung T = 25C i = 300A v max. vj F F on-state voltage max. 0,87 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 2 , 45 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 3 mA vj vj max R RRM R reverse current RMS, f = 50Hz, t = 1 sec V kV Isolations-Prfspannung ISOL 3,6 RMS, f = 50Hz, t = 1 min 3,0 kV insulation test voltage Thermische Eigenschaften / Thermal properties pro Modul / per Module, = 180 sin R max. 0,100 K/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,200 K/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,095 K/W pro Zweig / per arm, DC max. 0,190 K/W pro Modul / per Module max. 0,11 K/W bergangs-Wrmewiderstand R thCH max. 0,22 K/W pro Zweig / per arm thermal resistance, case to heatsink Hchstzulssige Sperrschichttemperatur T 130 C vj max maximum junction temperature Betriebstemperatur T - 40...+125 C c op operating temperature T - 40...+125 C stg Lagertemperatur storage temperature prepared by: AG date of publication: 2016-02-02 approved by: MS revision: 3.2 Date of Publication 2016-02-02 Revision 3.2 Seite/page: 2/10

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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