X-On Electronics has gained recognition as a prominent supplier of DD175N34K  Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DD175N34K  Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

DD175N34K Infineon

DD175N34K  electronic component of Infineon
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See Product Specifications
Part No.DD175N34K
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Double series; Urmax:3.4kV; Ifmax:175A; BG-PB50-1; Ufmax:900mV
Datasheet: DD175N34K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 274.4502 ea
Line Total: USD 274.45 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 274.4502

   
Manufacturer
Product Category
Module Type
Semiconductor Structure
Off State Voltage Max
Load Current Max
Case
Forward Voltage Max
Max Forward Impulse Current
Mounting
Electrical Mounting
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We are delighted to provide the DD175N34K  from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD175N34K  and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Datenblatt / Data sheet Netz-Dioden-Modul DD175N Rectifier Diode Module Kenndaten Key Parameters Elektrische Eigenschaften V / V 2800 - 3400 V DRM RRM Thermis I 175 A (T =100 C) FAVM C I 4500 A FSM 3570A (T =55C) C V 0,9 V T0 r 1,8 m T R 0,17 K/W thJC Base plate 50 mm Weight 800 g For type designation please refer to actual short form catalog Datenblatt / Data sheet Netz-Dioden-Modul DD175N Rectifier Diode Module DD175N Elektrische Eigenschaften / Electrical properties che Eigenschaften Hchstzulssige Werte / Maximum rated values 2800 3000 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM 1) 3200 3400 V repetitive peak reverse voltages 2900 3100 V Stospitzensperrspannung T = +25C... T V vj vj max RSM 3300 3500 V non-repetitive peak reverse voltage 350 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 175 A Dauergrenzstrom T = 100C I C FAVM 223 A average on-state current T = 78C C 4.500 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P FSM 4.000 A surge current T = T , t = 10 ms vj vj max P 101.000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 80.000 As It-value T = T , t = 10 ms vj vj max P Charakteristische Werte / Characteristic values max. 2,05 V Durchlaspannung T = T , i = 600 A v vj vj max F F on-state voltage 0,9 V Schleusenspannung T = T V vj vjmax (TO) threshold voltage 1,8 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 20 mA vj vj max R RRM R reverse current Isolations-Prfspannung RMS, f = 50 Hz, t = 1 sec V 3,6 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 min 3,0 kV Thermische Eigenschaften / Thermal properties pro Modul / per Module, = 180 sin R max. 0,085 C/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,170 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,082 C/W pro Zweig / per arm, DC max. 0,164 C/W pro Modul / per Module max. 0,02 C/W bergangs-Wrmewiderstand R thCH pro Zweig / per arm max. 0,04 C/W thermal resistance, case to heatsink 150 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur T - 40...+150 C c op operating temperature T - 40...+150 C Lagertemperatur stg storage temperature 1) 3400V auf Anfrage/ 3400V on request prepared by: A.G. date of publication: 27.09.16 approved by: M.S. revision: 3.0 Revision 3.0 Seite/page 2/11 Date of Publication 2016-09-27

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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CYPRESS SEMI
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INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
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INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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