?The Infineon DD180N22SHPSA1 discrete semiconductor module is a part designed for high-current applications, such as those in motor drives, solar inverters, and wind turbine systems. This module is designed to be used with N-channel IGBT or Insulated Gate Bipolar Transistor architectures and features both a collector-emitter voltage of 800V and a continuous current rating of up to 180A. Additionally, the DD180N22SHPSA1 is built on Infineon's LÃT-BOND technology, which combines copper bonding wires, lead-free solder, and a special interconnect design to optimize thermal performance. Lastly, the module is equipped with an integrated active clamp and desaturation protection functions.