X-On Electronics has gained recognition as a prominent supplier of DD230S26K Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DD230S26K Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

DD230S26K Infineon

DD230S26K electronic component of Infineon
Images are for reference only
See Product Specifications
Part No. DD230S26K
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 2600V 410A
Datasheet: DD230S26K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 267.8998
5 : USD 263.9592
10 : USD 263.9592
25 : USD 263.9592
100 : USD 263.9348
250 : USD 251.2102
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 266.8205
N/A

Obsolete
   
Manufacturer
Product Category
Mounting
Case
Electrical Mounting
Semiconductor Structure
Type Of Module
Max Load Current
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
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We are delighted to provide the DD230S26K from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD230S26K and other electronic components in the Discrete Semiconductor Modules category and beyond.

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European Power- Semiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 230 S 28,5 35 6 115 80 9 18 M8 18 92 AK K A March 1998DD 230 S Elektrische Eigenschaften Electrical properties Hchstzulssige Werte Maximum rated values Periodische Rckwrts- 1800 2000 2200 repetitive peak reverse voltage t = -40C...+ 150C V V vj RRM Spitzensperrspannung 2400 2600 1900 2100 2300 t = +25C...+ 150C V Rckwrts-Stospitzenspannung non-repetitive peak reverse voltage V vj RSM 2500 2700 Durchlastrom-Grenzeffektivwert RMS forward current I 410 A FRMSM Dauergrenzstrom mean forward current t = 100C I 230 A c FAVM t = 91C 261 A c t = 25C, t = 10 ms I Stostrom-Grenzwert surge forward current 9000 A vj p FSM t = t , t = 10 ms 7500 A vj vj max p 2 2 2 t = 25C, t = 10 ms Grenzlastintegral I t-value I t 405000 A s vj p 2 t = t , t = 10 ms 281000 A s vj vj max p Charakteristische Werte Characteristic values Durchlaspannung forward voltage t = t , i = 800 A v max. 1,74 V vj vj max F F Schleusenspannung threshold voltage t = t V 1,0 V vj vj max (TO) t = t r Ersatzwiderstand forward slope resistance 0,8 m vj vj max T t = t , v = V i Rckwrts-Sperrstrom reverse current max. 160 mA vj vj max R RRM R V Isolations-Prfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. 3 kV ISOL Thermische Eigenschaften Thermal properties Innerer Wrmewiderstand thermal resistance, junction =180el. sin: pro Modul/per module R max. 0,075 C/W thJC to case pro Zweig/per arm max. 0,150 C/W DC: pro Modul/per module max. 0,072 C/W pro Zweig/per arm max. 0,144 C/W R bergangs-Wrmewiderstand thermal resistance, case to heatsink pro Modul/per module max. 0,02 C/W thCK pro Zweig/per arm max. 0,04 C/W Hchstzul.Sperrschichttemperatur max. junction temperature t 150 C vj max Betriebstemperatur operating temperature t -40...+150 C c op 1) t Lagertemperatur storage temperature -40...+150 C stg Mechanische Eigenschaften Mechanical properties Gehuse, siehe Anlage case, see appendix Si-Elemente mit Druckkontakt Si-pellets with pressure contact Innere Isolation internal insulation AIN Anzugsdrehmomente tightening torques mechanische Befestigung mounting torque Toleranz/tolerance +/- 15% M1 6 Nm elektrische Anschlsse terminal connection torque Toleranz/tolerance +5%/-10% M2 12 Nm Gewicht weight G typ. 800 g Kriechstrecke creepage distance 17 mm Schwingfestigkeit vibration resistance f = 50 Hz 5 9,81 m/s 1) Gem DIN IEC 749 mit 747-1 gilt eine Zeitbegrenzung von 672 h. Fr die im Betrieb auftretende Gehusetemperatur gilt keine zeitliche Begrenzung. 1) According to DIN IEC 749 with 747-1 a time-limit of 672 h is defined. There is no time-limit set for case temperture during operation.

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
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Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
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INTERNATIONAL RECTIFIER
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INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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