X-On Electronics has gained recognition as a prominent supplier of DD360N22K Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DD360N22K Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

DD360N22K Infineon

DD360N22K electronic component of Infineon
DD360N22K Infineon
DD360N22K Discrete Semiconductor Modules
DD360N22K  Semiconductors

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See Product Specifications
Part No. DD360N22K
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules THYR / DIODE MODULE DK
Datasheet: DD360N22K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 192.005 ea
Line Total: USD 192 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 09 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 1
1 : USD 192.005
12 : USD 187.154
27 : USD 186.087
51 : USD 183.194
102 : USD 181.808
252 : USD 181.775
501 : USD 181.742
1002 : USD 181.698
2502 : USD 181.665

   
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We are delighted to provide the DD360N22K from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD360N22K and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Technische Daten / technical information Netz-Dioden-Modul DD360N22K Rectifier Diode Module Key Parameters V / V 2200 V DRM RRM I 360 A (T =100 C) TAVM C I 13000 A TSM V 0,75 V T0 r 0,4 m T R 0,118 K/W thJC Base plate 50 mm For type designation please refer to actual short form catalog Technische Daten / technical information Netz-Dioden-Modul DD360N22K Rectifier Diode Module DD360N22K Elektrische Eigenschaften / Electrical properties Kenndaten Hchstzulssige Werte / Maximum rated values Elektrische Eigenschaften 2200 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM repetitive peak reverse voltages Thermische Eigenschaften 2300 V Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage 565 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 360 A Dauergrenzstrom T = 100C I C FAVM average on-state current 13.000 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P FSM 11.000 A surge current T = T , t = 10 ms vj vj max P 845.000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 605.000 As It-value T = T , t = 10 ms vj vj max P Charakteristische Werte / Characteristic values max. 1,4 V Durchlaspannung T = T , i = 1500 A v vj vj max F F on-state voltage max. 0,75 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,4 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 25 mA vj vj max R RRM R reverse current Isolations-Prfspannung RMS, f = 50 Hz, t = 1 sec V 3,6 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 min 3,0 kV Thermische Eigenschaften / Thermal properties pro Modul / per Module, = 180 sin R max. 0,063 K/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,125 K/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,059 K/W pro Zweig / per arm, DC max. 0,1180 K/W pro Modul / per Module max. 0,02 K/W bergangs-Wrmewiderstand R thCH pro Zweig / per arm max. 0,04 K/W thermal resistance, case to heatsink 150 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur T - 40...+150 C c op operating temperature T - 40...+150 C Lagertemperatur stg storage temperature prepared by: C. Drilling date of publication: 10.02.14 approved by: M. Leifeld revision: 3.2 Date of Publication 2014-02-14 Revision: 3.2 Seite/page 2/9

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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