X-On Electronics has gained recognition as a prominent supplier of DD435N40K Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DD435N40K Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

DD435N40K Infineon

DD435N40K electronic component of Infineon
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Part No.DD435N40K
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 4KV 573A
Datasheet: DD435N40K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 588.577 ea
Line Total: USD 588.58 
Availability - 13
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
13
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 588.577
10 : USD 584.254
26 : USD 574.651
50 : USD 574.178
100 : USD 574.156
250 : USD 574.123
500 : USD 574.09
1000 : USD 574.013
2500 : USD 573.98

   
Manufacturer
Product Category
Vf - Forward Voltage
Vr - Reverse Voltage
Mounting Style
Package / Case
Electrical Mounting
Semiconductor Structure
Type Of Module
Max Load Current
Max Surge Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DD435N40K from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD435N40K and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Datenblatt / Data sheet N Netz-Dioden-Modul Rectifier Diode Module DD435N DD435N Elektrische Eigenschaften / Electrical properties Kenndaten Hchstzulssige Werte / Maximum rated values 2800 3200 V Elektrische Eigenschaften Periodische Spitzensperrspannung T = -25C... T V vj vj max RRM 3600 4000 V repetitive peak reverse voltages Thermische Eigenschaften 2900 3300 V Stospitzensperrspannung T = +25C... T V vj vj max RSM 3700 4100 V non-repetitive peak reverse voltage 900 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 435 A Dauergrenzstrom T = 100C I C FAVM 573 A average on-state current T = 75C C 14.500 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P FSM 12.000 A surge current T = T , t = 10 ms vj vj max P 1.050.000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 720.000 As It-value T = T , t = 10 ms vj vj max P Charakteristische Werte / Characteristic values max. 1,71 V Durchlaspannung T = T , i = 1200 A v vj vj max F F on-state voltage 0,84V Schleusenspannung T = T V vj vj max (TO) threshold voltage 0,6 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 50 mA vj vj max R RRM R reverse current Isolations-Prfspannung RMS, f = 50 Hz, t = 1 sec V 3,6 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 min 3,0 kV Thermische Eigenschaften / Thermal properties pro Modul / per Module, = 180 sin R max. 0,0390 C/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,0780 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,0373 C/W pro Zweig / per arm, DC max. 0,0745 C/W pro Modul / per Module max. 0,01 C/W bergangs-Wrmewiderstand R thCH pro Zweig / per arm max. 0,02 C/W thermal resistance, case to heatsink 150 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur T - 40...+150 C c op operating temperature T - 40...+150C Lagertemperatur stg storage temperature prepared by: C. Drilling date of publication: 10.03.05 approved by: M. Leifeld revision: 2 BIP AC/ 05-03-10, C. Drilling A04/05 Rev. 2 Seite/page 1/10 Datenblatt / Data sheet N Netz-Dioden-Modul Rectifier Diode Module DD435N Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Mechanische Eigenschaften Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz 15% M1 6 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz 10% M2 12 Nm terminal connection torque Gewicht G typ. 1500g weight Kriechstrecke 19mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83336 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP AC/ 05-03-10, C. Drilling A04/05 Rev. 2 Seite/page 2/10

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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