X-On Electronics has gained recognition as a prominent supplier of DD540N22K Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DD540N22K Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

DD540N22K Infineon

DD540N22K electronic component of Infineon
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Part No.DD540N22K
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Infineon Technologies Discrete Semiconductor Modules
Datasheet: DD540N22K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 291.896 ea
Line Total: USD 291.9 
Availability - 9
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 291.896
10 : USD 287.232

   
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Vr - Reverse Voltage
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Gate Trigger Current - Igt
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We are delighted to provide the DD540N22K from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD540N22K and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Technische Information / technical information Netz-Dioden-Modul DD540N Rectifier Diode Module Key Parameters V / V 2000 V - 2600 V DRM RRM I 540 A (T =100 C) FAVM C I 16500 A FSM V 0,78 V T0 r 0,31 m T R 0,078 K/W thJC Base plate 60 mm Weight 1500 g For type designation please refer to actual short form catalog Technische Information / technical information Netz-Dioden-Modul DD540N Rectifier Diode Module Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 2000 2200 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM 2400 2600 V repetitive peak reverse voltages 2100 2300 V Stospitzensperrspannung T = +25C... T V vj vj max RSM 2500 2700 V non-repetitive peak reverse voltage 900 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 540 A Dauergrenzstrom T = 100C I C FAVM average on-state current 16500 A Stostrom-Grenzwert T = 25C, t = 10ms I vj P FSM 14000 A surge current T = T , t = 10ms vj vj max P 1360000 As Grenzlastintegral T = 25C, t = 10ms It vj P 980000 As It-value T = T , t = 10ms vj vj max P Charakteristische Werte / Characteristic values max. 1,48 V Durchlaspannung T = T , i = 1700A v vj vj max F F on-state voltage max. 0,78 V Schleusenspannung T = T V vj vj max (TO) threshold voltage m max. 0 , 31 Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 40 mA vj vj max R RRM R reverse current RMS, f = 50Hz, t = 1 sec V 3,6 kV Isolations-Prfspannung ISOL RMS, f = 50Hz, t = 1 min 3,0 kV insulation test voltage Thermische Eigenschaften / Thermal properties Innerer Wrmewiderstand pro Modul / per Module, = 180 sin R max. 0,039 K/W thJC pro Zweig / per arm, = 180 sin max. 0,078 K/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,0373 K/W pro Zweig / per arm, DC max. 0,0745 K/W pro Modul / per Module max. 0,01 K/W bergangs-Wrmewiderstand R thCH pro Zweig / per arm max. 0,02 K/W thermal resistance, case to heatsink 150 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur T - 40...+150 C c op operating temperature T - 40...+150 C Lagertemperatur stg storage temperature prepared by: HR date of publication: 2018-07-30 approved by: ML revision: 3.2 Date of Publication 2018-07-30 Revision 3.2 Seite/page 2/10

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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