X-On Electronics has gained recognition as a prominent supplier of DDB6U144N16RBOSA1 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DDB6U144N16RBOSA1 Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

DDB6U144N16RBOSA1 Infineon

DDB6U144N16RBOSA1 electronic component of Infineon
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See Product Specifications
Part No.DDB6U144N16RBOSA1
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules LOW POWER ECONO
Datasheet: DDB6U144N16RBOSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 77.9347 ea
Line Total: USD 779.35 
Availability - 0
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 106.2806
5 : USD 96.4458
10 : USD 94.475
50 : USD 92.5044

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 10
Multiples : 10
10 : USD 77.9347
50 : USD 73.321

   
Manufacturer
Product Category
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Forward Voltage Vf Max
Diode Module Configuration
Product Range
Svhc
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We are delighted to provide the DDB6U144N16RBOSA1 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DDB6U144N16RBOSA1 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Technische Information / Technical Information Netz-Dioden-Modul DD B6U 144 N 16 (ECONO) N B6 Rectifier Diode Module Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values Periodische Spitzensperrspannung T = - 40C...T V 1600 V vj vj max RRM repetitive peak reverse voltage Stospitzensperrspannung T = + 25C...T V 1700 V vj vj max RSM non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert (pro Element) I 100 A FRMSM RMS forward current (per chip) Ausgangsstrom T = 100C I 145 A C d output current T = 84C 173 A C T = 45C, KP 0,5 S 71 A A T = 45C, KP 0,33 S 97 A A T = 35C, KP 0,41 S (V = 45l/s) 153 A A L T = 35C, KP 0,33 S (V = 90l/s) 173 A A L Stostrom-Grenzwert T = 25C, t = 10ms I 1200 A vj p FSM surge forward current T = T , t = 10ms 1000 A vj vj max p Grenzlastintegral T = 25C, t = 10ms It 7200 As vj p It-value T = T , t = 10ms 5000 As vj vj max p Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 150A v max. 1,65 V vj vj max F F forward voltage Schleusenspannung T = T V 0,75 V vj vj max (TO) threshold voltage m Ersatzwiderstand T = T r 3,1 vj vj max T forward slope resistance Sperrstrom T = T v V i max. 5 mA vj vj max, R = RRM R reverse current Isolations-Prfspannung RMS, f = 50Hz, t = 1min V 2,5 kV ISOL insulation test voltage RMS, f = 50Hz, t = 1sec 3,0 kV Thermische Eigenschaften / Thermal properties pro Modul / per module, = 120rect Innerer Wrmewiderstand R max. 0,148 C/W thJC pro Element / per chip, = 120rect thermal resistance, junction to case max. 0,890 C/W pro Modul / per module, DC max. 0,167 C/W pro Element / per chip, DC max. 0,700 C/W bergangs-Wrmewiderstand pro Modul / per module R max. 0,033 C/W thCK thermal resistance, case to heatsink pro Element / per chip max. 0,200 C/W Hchstzulssige Sperrschichttemperatur T 150 C vj max max. junction temperature Betriebstemperatur T - 40...+150 C c op operating temperature Lagertemperatur T - 40...+150 C stg storage temperature BIP PPE 4 rev. 2 A15/05 Seite/page 1(6) 26. Okt 05Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 144 N 16 (ECONO) N B6 Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see appendix page 3 Si-Elemente mit Ltkontakt, glaspassiviert Si-pellets with soldered contact, glass-passivated Innere Isolation Al O 2 3 internal insulation Anzugsdrehmoment fr mechanische Befestigung Toleranz / tolernance 15% M1 4 Nm mounting torque Gewicht G typ. 185 g weight Kriechstrecke 12,5 mm creepage distance Schwingfestigkeit f = 50Hz 50 m/s vibration resistance Khlkrper / heatsinks : BIP PPE 4 rev. 2 Seite/page 2(6) 26. Okt 05

Tariff Desc

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