DF23MR12W1M1 B11 EasyPACK Modul mit CoolSiC Trench MOSFET und PressFIT / NTC EasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC Vorlufige Daten / Preliminary Data V = 1200V DSS I = 25A / I = 50A D nom DRM Potentielle Anwendungen Potential Applications Solar Anwendungen Solar applications Elektrische Eigenschaften Electrical Features TM TM CoolSiC Schottky Diode Gen 5 CoolSiC Schottky diode gen 5 Hohe Stromdichte High current density Niederinduktives Design Low inductive design Niedrige Schaltverluste Low switching losses Mechanische Eigenschaften Mechanical Features Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor PressFIT Verbindungstechnik PressFIT contact technology Robuste Montage durch integrierte Rugged mounting due to integrated mounting Befestigungsklammern clamps Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.4 www.infineon.com 2018-12-13DF23MR12W1M1 B11 Vorlufige Daten Preliminary Data MOSFET / MOSFET Hchstzulssige Werte / Maximum Rated Values Drain-Source-Spannung T = 25C V 1200 V vj DSS Drain-source voltage Drain-Gleichstrom Tvj = 175C, VGS = 15 V TH = 70C ID nom 25 A DC drain current Gepulster Drainstrom verifiziert durch Design, t p limitiert durch Tvjmax I 50,0 A D pulse Pulsed drain current verified by design, t limited by T p vjmax Gate-Source Spannung VGSS -10 / 20 V Gate-source voltage Charakteristische Werte / Characteristic Values min. typ. max. Einschaltwiderstand ID = 25 A Tvj = 25C 45,0 Drain-source on resistance V = 15 V T = 125C R 59,0 m GS vj DS on Tvj = 150C 66,0 Gate-Schwellenspannung ID = 10,0 mA, V DS = VGS , Tvj = 25C VGS(th) 3,45 4,50 5,55 V Gate threshold voltage (tested after 1ms pulse at V = +20 V) GS Gesamt Gateladung V = -5 V / 15 V, V = 600 V Q 0,062 C GS DS G Total gate charge Interner Gatewiderstand Tvj = 25C RGint 4,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C vj C 1,84 nF iss Input capacitance VDS = 800 V, VGS = 0 V, VAC = 25 mV Ausgangskapazitt f = 1 MHz, T = 25C vj Coss 0,11 nF Output capacitance V = 800 V, V = 0 V, V = 25 mV DS GS AC Rckwirkungskapazitt f = 1 MHz, T = 25C vj C 0,014 nF rss Reverse transfer capacitance V = 800 V, V = 0 V, V = 25 mV DS GS AC C Speicherenergie T = 25C OSS vj Eoss 44,0 J C stored energy V = 800 V, V = -5 V / 15 V OSS DS GS Drain-Source-Reststrom V = 1200 V, V = -5 V T = 25C I 0,10 120 A DS GS vj DSS Zero gate voltage drain current Gate-Source-Reststrom V = 0 V V = 20 V 400 DS GS IGSS nA Gate-source leakage current Tvj = 25C VGS = -10 V Einschaltverzgerungszeit, induktive Last ID = 25 A, VDS = 600 V Tvj = 25C 11,3 Turn on delay time, inductive load V = -5 V / 15 V T = 125C t 10,6 ns GS vj d on R = 1,00 T = 150C 10,1 Gon vj Anstiegszeit, induktive Last ID = 25 A, VDS = 600 V Tvj = 25C 7,20 Rise time, inductive load V = -5 V / 15 V T = 125C t 7,20 ns GS vj r R = 1,00 T = 150C 7,20 Gon vj Abschaltverzgerungszeit, induktive Last ID = 25 A, VDS = 600 V Tvj = 25C 38,5 Turn off delay time, inductive load V = -5 V / 15 V T = 125C t 38,5 ns GS vj d off R = 1,00 T = 150C 38,5 Goff vj Fallzeit, induktive Last ID = 25 A, VDS = 600 V Tvj = 25C 12,8 Fall time, inductive load V = -5 V / 15 V T = 125C t 12,8 ns GS vj f R = 1,00 T = 150C 12,8 Goff vj Einschaltverlustenergie pro Puls ID = 25 A, VDS = 600 V, L = 35 nH Tvj = 25C 0,222 Turn-on energy loss per pulse di/dt = 6,80 kA/s (T = 150C) T = 125C E 0,227 mJ vj vj on V = -5 V / 15 V, R = 1,00 T = 150C 0,227 GS Gon vj Abschaltverlustenergie pro Puls ID = 25 A, VDS = 600 V, L = 35 nH Tvj = 25C 0,045 Turn-off energy loss per pulse du/dt = 62,0 kV/s (T = 150C) T = 125C E 0,045 mJ vj vj off V = -5 V / 15 V, R = 1,00 T = 150C 0,045 GS Goff vj Kurzschluverhalten VGS = -5 V / 15 V, VDD = 800 V tP 2 s, Tvj = 25C 210 A SC data V = V -L di/dt t 2 s, T = 150C I 205 A DSmax DSS sDS P vj SC R = 10,0 G Wrmewiderstand, Chip bis Khlkrper pro MOSFET / per MOSFET R 1,61 K/W thJH Thermal resistance, junction to heatsink Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Body Diode / Body diode Hchstzulssige Werte / Maximum Rated Values Body Diode-Gleichstrom T = 175C, V = -5 V T = 70C I 8 A vj GS H SD DC body diode forward current Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 25 A, V = -5 V T = 25C 4,60 5,65 SD GS vj Forward voltage I = 25 A, V = -5 V T = 125C V 4,35 V SD GS vj SD ISD = 25 A, VGS = -5 V Tvj = 150C 4,30 Datasheet 2 V 2.4 2018-12-13