X-On Electronics has gained recognition as a prominent supplier of DZ1100N22K Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DZ1100N22K Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

DZ1100N22K Infineon

DZ1100N22K electronic component of Infineon
Images are for reference only
See Product Specifications
Part No.DZ1100N22K
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules THYR / DIODE MODULE DK
Datasheet: DZ1100N22K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 498.575 ea
Line Total: USD 498.58 
Availability - 1
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 498.575
10 : USD 498.564
100 : USD 498.553
250 : USD 498.542
1000 : USD 498.498
2500 : USD 498.487

   
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We are delighted to provide the DZ1100N22K from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DZ1100N22K and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Technische Information / technical information Netz-Dioden-Modul DZ1100N22K Rectifier Diode Module Key Parameters V / V 2200 V DRM RRM I 1100 A (T =100C) FAVM C I 48000 A FSM 3570A (T =55C) C v 0,75 V T0 r 0,073 m T R 0,0466 K/W thJC Baseplate 70 mm Weight 1950 g For type designation please refer to actual shortform catalog Technische Information / technical information Netz-Dioden-Modul DZ1100N22K Rectifier Diode Module DZ1100N22K DZ1100N22K TIM Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 2200 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM repetitive peak reverse voltages 2300 V Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage 1800 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 1100 A Dauergrenzstrom T = 100C I C FAVM average on-state current 48000 A Stostrom-Grenzwert T = 25C, t = 10ms I vj P FSM 40000 A surge current T = T , t = 10ms vj vj max P 11520000 As Grenzlastintegral T = 25C, t = 10ms It vj P 8000000 As It-value T = T , t = 10ms vj vj max P Charakteristische Werte / Characteristic values 1,11 V Durchlaspannung T = T , i = 3000A v max. vj vj max F F on-state voltage max. 0,75 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0 , 0 73 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 80 mA vj vj max R RRM R reverse current RMS, f = 50Hz, t = 1 sec V kV Isolations-Prfspannung ISOL 3,6 RMS, f = 50Hz, t = 1 min 3,0 kV insulation test voltage Thermische Eigenschaften / Thermal properties pro Modul / per Module, = 180 sin R max. 0,0480 K/W Innerer Wrmewiderstand thJC max. thermal resistance, junction to case pro Modul / per Module, DC 0,0466 K/W pro Modul / per Module max. 0,015 K/W bergangs-Wrmewiderstand R thCH thermal resistance, case to heatsink pro Modul / per Module max. 0,012 K/W bergangs-Wrmewiderstand mit TIM R thCH thermal resistance, case to heatsink, with TIM 150 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur T - 40...+150 C c op operating temperature T - 40...+150 C Lagertemperatur stg storage temperature T +5...+50 C stg Lagertemperatur mit TIM storage temperature with TIM prepared by: AG date of publication: 2017-02-08 approved by: ML revision: 3.2 Date of Publication 2017-02-08 Revision 3.2 Seite/page 2/10

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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