X-On Electronics has gained recognition as a prominent supplier of DZ540N22K Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DZ540N22K Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

DZ540N22K Infineon

DZ540N22K electronic component of Infineon
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Part No.DZ540N22K
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 2200V 1150A
Datasheet: DZ540N22K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 215.479 ea
Line Total: USD 215.48 
Availability - 3
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 215.479
12 : USD 215.468
27 : USD 215.369
51 : USD 215.347
102 : USD 215.336
252 : USD 215.314
501 : USD 215.27
1002 : USD 215.248
2502 : USD 215.215

   
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We are delighted to provide the DZ540N22K from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DZ540N22K and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Datenblatt / Data sheet N Netz-Dioden-Modul Rectifier Diode Module DZ540N DZ540N DZ540NB01 Elektrische Eigenschaften / Electrical properties Kenndaten Hchstzulssige Werte / Maximum rated values 2000 2200 V Elektrische Eigenschaften Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM 2400 2600 V repetitive peak reverse voltages Thermische Eigenschaften 2100 2300 V Stospitzensperrspannung T = +25C... T V vj vj max RSM 2500 2700 V non-repetitive peak reverse voltage 1150 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 540 A Dauergrenzstrom T = 100C I C FAVM 732 A average on-state current T = 73C C 16.500 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P FSM 14.000 A surge current T = T , t = 10 ms vj vj max P 1.360.000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 980.000 As It-value T = T , t = 10 ms vj vj max P Charakteristische Werte / Characteristic values max. 1,64 V Durchlaspannung T = T , i = 2200 A v vj vj max F F on-state voltage 0,78V Schleusenspannung T = T V vj vj max (TO) threshold voltage 0,31 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 40 mA vj vj max R RRM R reverse current Isolations-Prfspannung RMS, f = 50 Hz, t = 1 sec V 3,6 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 min 3,0 kV Thermische Eigenschaften / Thermal properties pro Modul / per Module, = 180 sin R max. 0,0780 C/W Innerer Wrmewiderstand thJC pro Modul / per Module, DC max. 0,0745 C/W thermal resistance, junction to case pro Modul / per Module max. 0,02 C/W bergangs-Wrmewiderstand R thCH thermal resistance, case to heatsink 150 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur T - 40...+150 C c op operating temperature T - 40...+150C Lagertemperatur stg storage temperature prepared by: C. Drilling date of publication: 11.05.06 approved by: M. Leifeld revision: 2 BIP AC/ 97-08-08, R.Jrke A111/97 Seite/page 1/10 Datenblatt / Data sheet N Netz-Dioden-Modul Rectifier Diode Module DZ540N Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Mechanische Eigenschaften Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz 15% M1 5 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz 10% M2 12 Nm terminal connection torque Gewicht G typ. 900g weight Kriechstrecke 15mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83336 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP AC/ 97-08-08, R.Jrke A111/97 Seite/page 2/10

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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