ESD0P4RFL E6327 Infineon

ESD0P4RFL RF ESD Protection Diodes ESD protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 (ESD): 15 KV (air / contact) IEC61000-4-4 (EPT): 40 A (5/50 ns) IEC61000-4-5 (surge): 5 A (8/20 s) Very low line capacitance: 0.4 pF 1 GHz ( 0.2 pF per diode) Ultra low series inductance: 0.4 nH per diode Very low clamping voltage Ultra small leadless package:1.2 x 0.8 x 0.39 mm Pb-free (RoHS compliant) package Applications in anti-parallel configuration For low RF signal levels without superimposed DC voltage: e.g. GPS, XM-Radio, Sirius, DVB, DMB, DAB, Remote Keyless Entry Applications in rail-to-rail configuration For high RF signal levels or low RF signal levels with superimposed DC voltage: e.g. HDMI, S-ATA, Gbit Ethernet ESD0P4RFL 4 3 D1 D2 1 2 Type Package Configuration Marking ESD0P4RFL TSLP-4-7 anti-parallel E4 2011-06-27 1ESD0P4RFL Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 1) 15 kV ESD contact discharge V ESD 2) 5 A Peak pulse current (t = 8 / 20 s) I p pp C Operating temperature range T -55...150 op Storage temperature T -65...150 stg Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. Characteristics - 3) - - 50 V Reverse working voltage V RWM 3) - 20 100 nA Reverse current I R V = 50 V R 2) Forward clamping voltage V - 6 9 V FC I = 5 A PP 4) - 0.4 - pF Diode capacitance C T V = 0 V, f = 1 GHz R Series inductance per diode L - 0.4 - nH S 1 V according to IEC61000-4-2, only valid in anti-parallel or rail-to-rail connection. ESD Please refer to the application examples. 2 I according to IEC61000-4-5, only valid in anti-parallel or rail-to-rail connection. pp Please refer to the application examples. 3 Only valid in rail-to-rail configuration with V V CC RWM 4 Total capacitance line to ground (2 diodes in parallel) 2011-06-27 2