X-On Electronics has gained recognition as a prominent supplier of ESD24VS2UE6327HTSA1 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. ESD24VS2UE6327HTSA1 ESD Suppressors / TVS Diodes are a product manufactured by Infineon. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

ESD24VS2UE6327HTSA1 Infineon

ESD24VS2UE6327HTSA1 electronic component of Infineon
ESD24VS2UE6327HTSA1 Infineon
ESD24VS2UE6327HTSA1 ESD Suppressors / TVS Diodes
ESD24VS2UE6327HTSA1  Circuit Protection

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See Product Specifications
Part No. ESD24VS2UE6327HTSA1
Manufacturer: Infineon
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes ESD/EMI PROTECTION AUTOMOTIVE 30kV 26 V
Datasheet: ESD24VS2UE6327HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4538 ea
Line Total: USD 0.45 
Availability - 7481
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7481
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.4538
10 : USD 0.2938
100 : USD 0.192
500 : USD 0.1397
1000 : USD 0.1221
3000 : USD 0.0946
9000 : USD 0.0902

1715
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.462
10 : USD 0.3206
100 : USD 0.2072
117 : USD 0.1484
322 : USD 0.14

215019
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 234
Multiples : 1
234 : USD 0.2779
256 : USD 0.2535
500 : USD 0.2242
1000 : USD 0.182
2000 : USD 0.169
15000 : USD 0.1229
30000 : USD 0.1175
60000 : USD 0.1101

38072
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3852
Multiples : 1
3852 : USD 0.1218

   
Manufacturer
Product Category
Breakdown Voltage
Semiconductor Structure
Mounting
Case
Type Of Diode
Max Off-State Voltage
Power Dissipation
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We are delighted to provide the ESD24VS2UE6327HTSA1 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ESD24VS2UE6327HTSA1 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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ESD24VS2U Silicon TVS diodes ESD / transient protection of CAN/LIN bus networks power supply lines according to: IEC61000-4-2 (ESD): 30kV (air / contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (surge): 5 A (8/20s) ISO7637-2: Pulse 1 (max. 50 V), Pulse 2 (max. 125 V), Pulse 3a, b (max.800 V) Max. working voltage: 24 V Low capacitance: 24 pF typ. Low clamping voltage: < 41 V Extremely low reverse current: < 1 nA typ. Pb-free (RoHS compliant) package Applications Low and High-Speed CAN Fault Tolerant CAN Industrial control networks 12/24 V DC power supply lines ESD24VS2U Type Package Configuration Marking ESD24VS2U SOT23 2 lines, uni-directional* EUs * 1 line, bi-directional between pins 1 and 2, if pin 3 is not connested 2011-12-05 1ESD24VS2U Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 1) 30 kV ESD contact discharge V ESD 2) 5 A Peak pulse current (t = 8 / 20 s) I p pp 2) 230 W Peak pulse power (t = 8 / 20 s) P p pk C Operating temperature range T -55...150 op Storage temperature T -65...150 stg Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. Characteristics - - 24 V Reverse working voltage V RWM 26 - 32 Breakdown voltage V (BR) I = 1 mA (BR) - <1 10 nA Reverse current I R V = 24 V R V Clamping voltage V CL 2) I = 1 A, t = 8 / 20 s) - 30 34 PP p 2) I = 5 A, t = 8 / 20 s) - 36 41 PP p 3) pF Line capacitance C T V = 0 V, f = 1 MHz, (pins 1 to 2, pin 3 n.c.) - 24 28 R V = 0 V, f = 1 MHz, (pins 1 or 2 to 3) - 48 52 R 1 V according to IEC61000-4-2. Device stressed with 10 positive / negative ESD pulses. ESD 2 I according to IEC61000-4-5. Non-repetitive current pulse. pp 3 Total capacitance line to ground (per linie) 2011-12-05 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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