ESD5V0S... Silicon TVS Diodes ESD / transient protection of data and power lines in 3.3 V / 5 V applications according to: IEC61000-4-2 (ESD): 30 kV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (surge): 40 A/600 W (8/20 s) Max. working voltage: 5 V Low clamping voltage Low reverse current Pb-free (RoHS compliant) package Applications Uni or bi-directional operation possible (see application example page 5) Mobile communication Consumer products (STB, MP3, DVD, DSC...) LCD displays, camera Notebooks and desktop computers, peripherals - ESD5V0S1U-03W ESD5V0S2U-06 3 D2 1 2 D1 1 2 Type Package Configuration Marking ESD5V0S1U-03W SOD323 1 line, uni-directional yellow E ESD5V0S2U-06 SOT23 2 lines, uni-directional E5 2011-06-17 1ESD5V0S... Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 1) 30 kV ESD contact discharge V ESD 2) 40 A Peak pulse current (t = 8 / 20 s) I p pp 2) 600 W Peak pulse power (t = 8 / 20 s) P p pk C Operating temperature range T -55...125 op Storage temperature T -65...150 stg Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. Characteristics - - - 5 V Reverse working voltage V RWM 5.5 6.7 8 Breakdown voltage V (BR) I = 1 mA (BR) A Reverse current I R V = 3.3 V - - 5 R V = 5 V - - 20 R V Clamping voltage (positive transient) V CL 2) I = 5 A, t = 8/20 s - 7.5 9.5 PP p 2) I = 24 A, t = 8/20 s - 9 12 PP p 2) I = 40 A, t = 8/20 s - 11 14 PP p Forward clamping voltage (negative transients) V FC 2) I = 5 A, t = 8/20 s - 1.5 3 PP p 2) I = 24 A, t = 8/20 s - 3 5 PP p 2) I = 40 A, t = 8/20 s - 4 6 PP p - 430 500 pF Diode capacitance C T V = 0 V, f = 1 MHz R 1 V according to IEC61000-4-2 ESD 2 I according to IEC61000-4-5 pp 2011-06-17 2