FF23MR12W1M1 B11 EasyDUAL Modul mit CoolSiC Trench MOSFET und PressFIT / NTC EasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTC Vorlufige Daten / Preliminary Data V = 1200V DSS I = 50A / I = 100A D nom DRM Potentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler DC/DC converter Solar Anwendungen Solar applications USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Hohe Stromdichte High current density Niederinduktives Design Low inductive design Niedrige Schaltverluste Low switching losses Mechanische Eigenschaften Mechanical Features Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor PressFIT Verbindungstechnik PressFIT contact technology Robuste Montage durch integrierte Rugged mounting due to integrated mounting Befestigungsklammern clamps Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.2 www.infineon.com 2018-07-02FF23MR12W1M1 B11 Vorlufige Daten Preliminary Data MOSFET / MOSFET Hchstzulssige Werte / Maximum Rated Values Drain-Source-Spannung T = 25C V 1200 V vj DSS Drain-source voltage Drain-Gleichstrom Tvj = 175C, VGS = 15 V TH = 75C ID nom 50 A DC drain current Gepulster Drainstrom verifiziert durch Design, t p limitiert durch Tvjmax I 100 A D pulse Pulsed drain current verified by design, t limited by T p vjmax Gate-Source Spannung VGSS -10 / 20 V Gate-source voltage Charakteristische Werte / Characteristic Values min. typ. max. Einschaltwiderstand ID = 50 A Tvj = 25C 22,5 Drain-source on resistance V = 15 V T = 125C R 29,5 m GS vj DS on Tvj = 150C 33,0 Gate-Schwellenspannung ID = 20,0 mA, V DS = VGS , Tvj = 25C VGS(th) 3,45 4,50 5,55 V Gate threshold voltage (tested after 1ms pulse at V = +20 V) GS Gesamt Gateladung V = -5 V / 15 V, V = 800 V Q 0,124 C GS DS G Total gate charge Interner Gatewiderstand Tvj = 25C RGint 2,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C vj C 3,68 nF iss Input capacitance VDS = 800 V, VGS = 0 V, VAC = 25 mV Ausgangskapazitt f = 1 MHz, T = 25C vj Coss 0,22 nF Output capacitance V = 800 V, V = 0 V, V = 25 mV DS GS AC Rckwirkungskapazitt f = 1 MHz, T = 25C vj C 0,028 nF rss Reverse transfer capacitance V = 800 V, V = 0 V, V = 25 mV DS GS AC C Speicherenergie T = 25C OSS vj Eoss 88,0 J C stored energy V = 800 V, V = -5 V / 15 V OSS DS GS Drain-Source-Reststrom V = 1200 V, V = -5 V T = 25C I 0,20 210 A DS GS vj DSS Zero gate voltage drain current Gate-Source-Reststrom V = 0 V V = 20 V 400 DS GS IGSS nA Gate-source leakage current Tvj = 25C VGS = -10 V Einschaltverzgerungszeit, induktive Last ID = 50 A, VDS = 600 V Tvj = 25C 12,0 Turn on delay time, inductive load V = -5 V / 15 V T = 125C t 11,3 ns GS vj d on R = 1,00 T = 150C 8,90 Gon vj Anstiegszeit, induktive Last ID = 50 A, VDS = 600 V Tvj = 25C 10,0 Rise time, inductive load V = -5 V / 15 V T = 125C t 9,60 ns GS vj r R = 1,00 T = 150C 9,20 Gon vj Abschaltverzgerungszeit, induktive Last ID = 50 A, VDS = 600 V Tvj = 25C 43,5 Turn off delay time, inductive load V = -5 V / 15 V T = 125C t 43,5 ns GS vj d off R = 1,00 T = 150C 43,5 Goff vj Fallzeit, induktive Last ID = 50 A, VDS = 600 V Tvj = 25C 12,0 Fall time, inductive load V = -5 V / 15 V T = 125C t 12,0 ns GS vj f R = 1,00 T = 150C 12,0 Goff vj Einschaltverlustenergie pro Puls ID = 50 A, VDS = 600 V, L = 35 nH Tvj = 25C 0,49 Turn-on energy loss per pulse di/dt = 11,0 kA/s (T = 150C) T = 125C E 0,535 mJ vj vj on V = -5 V / 15 V, R = 1,00 T = 150C 0,559 GS Gon vj Abschaltverlustenergie pro Puls ID = 50 A, VDS = 600 V, L = 35 nH Tvj = 25C 0,094 Turn-off energy loss per pulse du/dt = 53,0 kV/s (T = 150C) T = 125C E 0,094 mJ vj vj off V = -5 V / 15 V, R = 1,00 T = 150C 0,091 GS Goff vj Kurzschluverhalten VGS = -5 V / 15 V, VDD = 800 V tP 2 s, Tvj = 25C 420 A SC data V = V -L di/dt t 2 s, T = 150C I 410 A DSmax DSS sDS P vj SC R = 10,0 G Wrmewiderstand, Chip bis Khlkrper pro MOSFET / per MOSFET R 0,800 K/W thJH Thermal resistance, junction to heatsink Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Body Diode / Body diode Hchstzulssige Werte / Maximum Rated Values Body Diode-Gleichstrom T = 175C, V = -5 V T = 75C I 16 A vj GS H SD DC body diode forward current Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 50 A, V = -5 V T = 25C 4,60 5,65 SD GS vj Forward voltage I = 50 A, V = -5 V T = 125C V 4,35 V SD GS vj SD ISD = 50 A, VGS = -5 V Tvj = 150C 4,30 Datasheet 2 V 2.2 2018-07-02